DOI: 10.1063/1.111169. Delineation of semiconductor doping by scanning resistance microscopy

Delineation of semiconductor doping by scanning resistance microscopy

10.1063/1.111169

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A new technique for the two-dimensional delineation of P-N junctions is presented using a scanning resistance microscope (SRM). The SRM uses a conducting probe to perform localized resistance measurements over a surface. These measurements are used to delineate between regions of different doping type and concentration. By using contact forces of 10−4 N, the contact area is estimated to be 30 nm. Experiments have shown the SRM capable of junction delineation with a lateral spacial resolution of less than 35 nm. In addition, during resistance measurements the SRM performs simultaneous surface topography measurements.

Bibliography

Shafai, C., Thomson, D. J., Simard-Normandin, M., Mattiussi, G., & Scanlon, P. J. (1994). Delineation of semiconductor doping by scanning resistance microscopy. Applied Physics Letters, 64(3), 342â344.

Authors 5

C. Shafai (first)
D. J. Thomson (additional)
M. Simard-Normandin (additional)
G. Mattiussi (additional)
P. J. Scanlon (additional)

References 11 Referenced 68

10.1063/1.99876 / Appl. Phys. Lett. (1988)
10.1143/JJAP.30.3638 / Jpn. J. Appl. Phys. (1991)
10.1116/1.585536 / J. Vac. Sci. Technol. B (1991)
10.1109/55.119152 / IEEE Electron Devices Lett. (1991)
10.1116/1.585548 / J. Vac. Sci. Technol. B (1991)
10.1116/1.585533 / J. Vac. Sci. Technol. B (1991)
10.1063/1.97348 / Appl. Phys. Lett. (1986)
10.1063/1.105649 / Appl. Phys. Lett. (1991)
10.1116/1.585467 / J. Vac. Sci. Technol. B (1991)
{'key': '2024020306450396800_r10'}
{'key': '2024020306450396800_r11'}

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:38 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 1:45 a.m.)
Indexed	2 months ago (June 24, 2025, 12:29 p.m.)
Issued	31 years, 7 months ago (Jan. 17, 1994)
Published	31 years, 7 months ago (Jan. 17, 1994)
Published Print	31 years, 7 months ago (Jan. 17, 1994)

Funders 0

None

BibTeX

@article{Shafai_1994, title={Delineation of semiconductor doping by scanning resistance microscopy}, volume={64}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.111169}, DOI={10.1063/1.111169}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Shafai, C. and Thomson, D. J. and Simard-Normandin, M. and Mattiussi, G. and Scanlon, P. J.}, year={1994}, month=jan, pages={342–344} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        6,
        24
      ]
    ],
    "date-time": "2025-06-24T16:29:14Z",
    "timestamp": 1750782554113
  },
  "reference-count": 11,
  "publisher": "AIP Publishing",
  "issue": "3",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1994,
        1,
        17
      ]
    ]
  },
  "abstract": "<jats:p>A new technique for the two-dimensional delineation of P-N junctions is presented using a scanning resistance microscope (SRM). The SRM uses a conducting probe to perform localized resistance measurements over a surface. These measurements are used to delineate between regions of different doping type and concentration. By using contact forces of 10\u22124 N, the contact area is estimated to be 30 nm. Experiments have shown the SRM capable of junction delineation with a lateral spacial resolution of less than 35 nm. In addition, during resistance measurements the SRM performs simultaneous surface topography measurements. \u2009</jats:p>",
  "DOI": "10.1063/1.111169",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:38:29Z",
    "timestamp": 1027690709000
  },
  "page": "342-344",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 68,
  "title": "Delineation of semiconductor doping by scanning resistance microscopy",
  "prefix": "10.1063",
  "volume": "64",
  "author": [
    {
      "given": "C.",
      "family": "Shafai",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Department of Electrical Engineering, University of Manitoba, Winnipeg, Manitoba, Canada R3T 2N2"
        }
      ]
    },
    {
      "given": "D. J.",
      "family": "Thomson",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical Engineering, University of Manitoba, Winnipeg, Manitoba, Canada R3T 2N2"
        }
      ]
    },
    {
      "given": "M.",
      "family": "Simard-Normandin",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Northern Telecom Limited, Ottawa, Ontario, Canada, K1Y 4H7"
        }
      ]
    },
    {
      "given": "G.",
      "family": "Mattiussi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Physics, Queens University, Kingston, Ontario, Canada, K7L 3N6"
        }
      ]
    },
    {
      "given": "P. J.",
      "family": "Scanlon",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Physics, Queens University, Kingston, Ontario, Canada, K7L 3N6"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020306450396800_r1",
      "doi-asserted-by": "crossref",
      "first-page": "487",
      "DOI": "10.1063/1.99876",
      "volume": "53",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020306450396800_r2",
      "doi-asserted-by": "crossref",
      "first-page": "3638",
      "DOI": "10.1143/JJAP.30.3638",
      "volume": "30",
      "year": "1991",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020306450396800_r3",
      "doi-asserted-by": "crossref",
      "first-page": "703",
      "DOI": "10.1116/1.585536",
      "volume": "9",
      "year": "1991",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024020306450396800_r4",
      "doi-asserted-by": "crossref",
      "first-page": "422",
      "DOI": "10.1109/55.119152",
      "volume": "12",
      "year": "1991",
      "journal-title": "IEEE Electron Devices Lett."
    },
    {
      "key": "2024020306450396800_r5",
      "doi-asserted-by": "crossref",
      "first-page": "752",
      "DOI": "10.1116/1.585548",
      "volume": "9",
      "year": "1991",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024020306450396800_r6",
      "doi-asserted-by": "crossref",
      "first-page": "690",
      "DOI": "10.1116/1.585533",
      "volume": "9",
      "year": "1991",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024020306450396800_r7",
      "doi-asserted-by": "crossref",
      "first-page": "1441",
      "DOI": "10.1063/1.97348",
      "volume": "49",
      "year": "1986",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020306450396800_r8",
      "doi-asserted-by": "crossref",
      "first-page": "3536",
      "DOI": "10.1063/1.105649",
      "volume": "59",
      "year": "1991",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020306450396800_r9",
      "doi-asserted-by": "crossref",
      "first-page": "601",
      "DOI": "10.1116/1.585467",
      "volume": "9",
      "year": "1991",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024020306450396800_r10"
    },
    {
      "key": "2024020306450396800_r11"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/64/3/342/18500643/342_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/64/3/342/18500643/342_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T06:45:24Z",
    "timestamp": 1706942724000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/64/3/342/63539/Delineation-of-semiconductor-doping-by-scanning"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1994,
        1,
        17
      ]
    ]
  },
  "references-count": 11,
  "journal-issue": {
    "issue": "3",
    "published-print": {
      "date-parts": [
        [
          1994,
          1,
          17
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.111169",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1994,
        1,
        17
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1994,
        1,
        17
      ]
    ]
  }
}