Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

A combination of lithographic patterning, liquid phase anisotropic etching, and focused ion beam milling has been used to prototype the production of scanning probe microscope tips in single-crystal silicon. The results show that tips with geometry equivalent to those made with iridium or tungsten wires can be made without the deleterious random effects of grain structure. The tips subtend a maximum cone angle of 20° and protrude 3.5 μm above the surface of a Si pyramid bounded by (111) planes.

Bibliography

Vasile, M. J., Biddick, C., & Huggins, H. (1994). Formation of probe microscope tips in silicon by focused ion beams. Applied Physics Letters, 64(5), 575–576.

Authors 3
  1. Michael J. Vasile (first)
  2. Christopher Biddick (additional)
  3. Harold Huggins (additional)
References 15 Referenced 16
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:38 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 1:48 a.m.)
Indexed 1 year, 6 months ago (Feb. 3, 2024, 2:10 a.m.)
Issued 31 years, 6 months ago (Jan. 31, 1994)
Published 31 years, 6 months ago (Jan. 31, 1994)
Published Print 31 years, 6 months ago (Jan. 31, 1994)
Funders 0

None

@article{Vasile_1994, title={Formation of probe microscope tips in silicon by focused ion beams}, volume={64}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.111108}, DOI={10.1063/1.111108}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Vasile, Michael J. and Biddick, Christopher and Huggins, Harold}, year={1994}, month=jan, pages={575–576} }