DOI: 10.1063/1.111004. Large scale surface structure formed during GaAs (001) homoepitaxy

Large scale surface structure formed during GaAs (001) homoepitaxy

10.1063/1.111004

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Atomic force microscopy studies have been performed on GaAs (001) homoepitaxy films grown by molecular beam epitaxy. Multilayered features are seen to evolve when the growth conditions favor island nucleation. As the epilayer thickness is increased these features grow in all dimensions but the angle of inclination remains approximately constant at 1°. The mounding does not occur on surfaces grown in step flow. We propose that the multilayered features are an unstable growth mode which relies on island nucleation and the presence of a step edge barrier.

Bibliography

Orme, C., Johnson, M. D., Sudijono, J. L., Leung, K. T., & Orr, B. G. (1994). Large scale surface structure formed during GaAs (001) homoepitaxy. Applied Physics Letters, 64(7), 860â862.

Authors 5

C. Orme (first)
M. D. Johnson (additional)
J. L. Sudijono (additional)
K. T. Leung (additional)
B. G. Orr (additional)

References 14 Referenced 122

10.1103/PhysRevB.46.1905 / Phys. Rev. B (1992)
10.1063/1.106892 / Appl. Phys. Lett. (1992)
10.1016/0039-6028(93)90678-D / Surf. Sci. (1993)
10.1063/1.111137 / Appl. Phys. Lett. (1994)
10.1143/JJAP.24.L478 / Jpn. J. Appl. Phys. (1985)
10.1016/0022-0248(93)90769-S / J. Cryst. Growth (1993)
10.1143/JJAP.27.L2259 / Jpn. J. Appl. Phys. (1988)
10.1103/PhysRevLett.70.4106 / Phys. Rev. Lett. (1993)
10.1063/1.1142456 / Rev. Sci. Instrum. (1991)
{'key': '2024020306524573900_r10'}
10.1103/PhysRevLett.72.116 / Phys. Rev. Lett. (1994)
10.1063/1.1707904 / J. Appl. Phys. (1966)
{'key': '2024020306524573900_r13', 'first-page': '19', 'volume': '11', 'year': '1991', 'journal-title': 'J. Phys.'} / J. Phys. (1991)
{'key': '2024020306524573900_r14'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:44 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 1:52 a.m.)
Indexed	5 months ago (April 5, 2025, 5:47 a.m.)
Issued	31 years, 6 months ago (Feb. 14, 1994)
Published	31 years, 6 months ago (Feb. 14, 1994)
Published Print	31 years, 6 months ago (Feb. 14, 1994)

Funders 0

None

BibTeX

@article{Orme_1994, title={Large scale surface structure formed during GaAs (001) homoepitaxy}, volume={64}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.111004}, DOI={10.1063/1.111004}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Orme, C. and Johnson, M. D. and Sudijono, J. L. and Leung, K. T. and Orr, B. G.}, year={1994}, month=feb, pages={860–862} }

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