DOI: 10.1063/1.110041. Fabrication of GaAs quantum wires (∼10 nm) by metalorganic chemical vapor selective deposition growth

Fabrication of GaAs quantum wires (∼10 nm) by metalorganic chemical vapor selective deposition growth

10.1063/1.110041

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

GaAs triangular-shaped quantum wires with the lateral width of ∼10 nm are fabricated by metalorganic chemical vapor selective deposition growth technique. The lateral dimension is determined by both photoluminescence (PL) measurement and a high-resolution scanning electron micrograph observation. A systematic change in the size of the quantum wire exhibits consistent blue shifts of the PL peak keeping high intensities, which demonstrates enhanced two-dimensional quantum confinement with the material of high quality.

Bibliography

Tsukamoto, S., Nagamune, Y., Nishioka, M., & Arakawa, Y. (1993). Fabrication of GaAs quantum wires (â¼10 nm) by metalorganic chemical vapor selective deposition growth. Applied Physics Letters, 63(3), 355â357.

Authors 4

S. Tsukamoto (first)
Y. Nagamune (additional)
M. Nishioka (additional)
Y. Arakawa (additional)

References 14 Referenced 66

10.1063/1.92959 / Appl. Phys. Lett. (1982)
10.1063/1.95453 / Appl. Phys. Lett. (1984)
10.1049/el:19890282 / Electron. Lett. (1989)
10.1063/1.102862 / Appl. Phys. Lett. (1990)
10.1016/0022-0248(88)90630-6 / J. Cryst. Growth (1988)
{'key': '2024020305542198200_r6'}
10.1063/1.350695 / J. Appl. Phys. (1992)
10.1103/PhysRev.176.993 / Phys. Rev. (1968)
10.1063/1.91927 / Appl. Phys. Lett. (1980)
{'key': '2024020305542198200_r9'}
10.1063/1.109614 / Appl. Phys. Lett. (1993)
{'key': '2024020305542198200_r10'}
10.1063/1.347109 / J. Appl. Phys. (1990)
{'key': '2024020305542198200_r12', 'first-page': '1552', 'volume': '57', 'year': '1989', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1989)

Dates

Type	When
Created	23 years ago (July 26, 2002, 8:58 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 12:54 a.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 6:05 a.m.)
Issued	32 years, 1 month ago (July 19, 1993)
Published	32 years, 1 month ago (July 19, 1993)
Published Print	32 years, 1 month ago (July 19, 1993)

Funders 0

None

BibTeX

@article{Tsukamoto_1993, title={Fabrication of GaAs quantum wires (∼10 nm) by metalorganic chemical vapor selective deposition growth}, volume={63}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.110041}, DOI={10.1063/1.110041}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tsukamoto, S. and Nagamune, Y. and Nishioka, M. and Arakawa, Y.}, year={1993}, month=jul, pages={355–357} }

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