DOI: 10.1063/1.109949. Electron transport properties of Si/SiGe heterostructures: Measurements and device implications

Electron transport properties of Si/SiGe heterostructures: Measurements and device implications

10.1063/1.109949

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report electron transport properties of modulation-doped Si/SiGe at 300 and 77 K. Record mobilities of 2830 and 18 000 cm2/V s at 300 and 77 K, respectively, have been measured. Depending on the spacer layer thickness, the sheet resistance of the Si channel is in the range of 2000–10 000 Ω/⧠ at 300 K and 450–700 Ω/⧠ at 77 K. The low field electron drift velocity is 2–3 (5–10) times higher than the corresponding velocity measured in Si/SiO2 structures at 300 K (77 K). The saturation velocity is measured to be only 5% higher than in bulk Si, at both 300 and 77 K, but appears at a lower electric field. The effect of the enhanced transport properties in modulation-doped Si/SiGe on device design and performance is investigated.

Bibliography

Ismail, K., Nelson, S. F., Chu, J. O., & Meyerson, B. S. (1993). Electron transport properties of Si/SiGe heterostructures: Measurements and device implications. Applied Physics Letters, 63(5), 660â662.

Authors 4

K. Ismail (first)
S. F. Nelson (additional)
J. O. Chu (additional)
B. S. Meyerson (additional)

References 16 Referenced 150

10.1063/1.100206 / Appl. Phys. Lett. (1988)
10.1063/1.104978 / Appl. Phys. Lett. (1991)
{'key': '2024020305575649600_r3'}
10.1063/1.107670 / Appl. Phys. Lett. (1992)
{'key': '2024020305575649600_r5', 'first-page': '229', 'volume': 'EDL-13', 'year': '1992', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1992)
{'key': '2024020305575649600_r5a', 'first-page': '348', 'volume': 'EDL-14', 'year': '1993', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1993)
10.1063/1.106319 / Appl. Phys. Lett. (1991)
10.1063/1.106246 / Appl. Phys. Lett. (1991)
10.1088/0268-1242/7/2/014 / Semicond. Sci. Technol. (1992)
10.1103/PhysRevLett.54.2441 / Phys. Rev. Lett. (1985)
10.1063/1.109021 / Appl. Phys. Lett. (1993)
{'key': '2024020305575649600_r11', 'first-page': '576', 'volume': '45', 'year': '1974', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1974)
10.1103/PhysRev.169.619 / Phys. Rev. B (1968)
10.1016/0038-1101(77)90054-5 / Solid State Electron. (1977)
{'key': '2024020305575649600_r14'}
10.1063/1.109278 / Appl. Phys. Lett. (1993)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:38 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 12:58 a.m.)
Indexed	3 months ago (May 22, 2025, 12:45 p.m.)
Issued	32 years ago (Aug. 2, 1993)
Published	32 years ago (Aug. 2, 1993)
Published Print	32 years ago (Aug. 2, 1993)

Funders 0

None

BibTeX

@article{Ismail_1993, title={Electron transport properties of Si/SiGe heterostructures: Measurements and device implications}, volume={63}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.109949}, DOI={10.1063/1.109949}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ismail, K. and Nelson, S. F. and Chu, J. O. and Meyerson, B. S.}, year={1993}, month=aug, pages={660–662} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        5,
        22
      ]
    ],
    "date-time": "2025-05-22T16:45:52Z",
    "timestamp": 1747932352503
  },
  "reference-count": 16,
  "publisher": "AIP Publishing",
  "issue": "5",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1993,
        8,
        2
      ]
    ]
  },
  "abstract": "<jats:p>We report electron transport properties of modulation-doped Si/SiGe at 300 and 77 K. Record mobilities of 2830 and 18\u2009000 cm2/V\u2009s at 300 and 77 K, respectively, have been measured. Depending on the spacer layer thickness, the sheet resistance of the Si channel is in the range of 2000\u201310\u2009000 \u03a9/\u29e0 at 300 K and 450\u2013700 \u03a9/\u29e0 at 77 K. The low field electron drift velocity is 2\u20133 (5\u201310) times higher than the corresponding velocity measured in Si/SiO2 structures at 300 K (77 K). The saturation velocity is measured to be only 5% higher than in bulk Si, at both 300 and 77 K, but appears at a lower electric field. The effect of the enhanced transport properties in modulation-doped Si/SiGe on device design and performance is investigated. \u2009</jats:p>",
  "DOI": "10.1063/1.109949",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:38:28Z",
    "timestamp": 1027690708000
  },
  "page": "660-662",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 150,
  "title": "Electron transport properties of Si/SiGe heterostructures: Measurements and device implications",
  "prefix": "10.1063",
  "volume": "63",
  "author": [
    {
      "given": "K.",
      "family": "Ismail",
      "sequence": "first",
      "affiliation": [
        {
          "name": "IBM, T. J. Watson Research Center, Yorktown Heights, New York 10598"
        }
      ]
    },
    {
      "given": "S. F.",
      "family": "Nelson",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IBM, T. J. Watson Research Center, Yorktown Heights, New York 10598"
        }
      ]
    },
    {
      "given": "J. O.",
      "family": "Chu",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IBM, T. J. Watson Research Center, Yorktown Heights, New York 10598"
        }
      ]
    },
    {
      "given": "B. S.",
      "family": "Meyerson",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IBM, T. J. Watson Research Center, Yorktown Heights, New York 10598"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020305575649600_r1",
      "doi-asserted-by": "crossref",
      "first-page": "2555",
      "DOI": "10.1063/1.100206",
      "volume": "53",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020305575649600_r2",
      "doi-asserted-by": "crossref",
      "first-page": "2117",
      "DOI": "10.1063/1.104978",
      "volume": "58",
      "year": "1991",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020305575649600_r3"
    },
    {
      "key": "2024020305575649600_r4",
      "doi-asserted-by": "crossref",
      "first-page": "64",
      "DOI": "10.1063/1.107670",
      "volume": "61",
      "year": "1992",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020305575649600_r5",
      "first-page": "229",
      "volume": "EDL-13",
      "year": "1992",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2024020305575649600_r5a",
      "first-page": "348",
      "volume": "EDL-14",
      "year": "1993",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2024020305575649600_r6",
      "doi-asserted-by": "crossref",
      "first-page": "973",
      "DOI": "10.1063/1.106319",
      "volume": "59",
      "year": "1991",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020305575649600_r7",
      "doi-asserted-by": "crossref",
      "first-page": "1611",
      "DOI": "10.1063/1.106246",
      "volume": "59",
      "year": "1991",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020305575649600_r8",
      "doi-asserted-by": "crossref",
      "first-page": "260",
      "DOI": "10.1088/0268-1242/7/2/014",
      "volume": "7",
      "year": "1992",
      "journal-title": "Semicond. Sci. Technol."
    },
    {
      "key": "2024020305575649600_r9",
      "doi-asserted-by": "crossref",
      "first-page": "2441",
      "DOI": "10.1103/PhysRevLett.54.2441",
      "volume": "54",
      "year": "1985",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024020305575649600_r10",
      "doi-asserted-by": "crossref",
      "first-page": "3464",
      "DOI": "10.1063/1.109021",
      "volume": "62",
      "year": "1993",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020305575649600_r11",
      "first-page": "576",
      "volume": "45",
      "year": "1974",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020305575649600_r12",
      "doi-asserted-by": "crossref",
      "first-page": "619",
      "DOI": "10.1103/PhysRev.169.619",
      "volume": "169",
      "year": "1968",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020305575649600_r13",
      "doi-asserted-by": "crossref",
      "first-page": "77",
      "DOI": "10.1016/0038-1101(77)90054-5",
      "volume": "20",
      "year": "1977",
      "journal-title": "Solid State Electron."
    },
    {
      "key": "2024020305575649600_r14"
    },
    {
      "key": "2024020305575649600_r15",
      "doi-asserted-by": "crossref",
      "first-page": "2661",
      "DOI": "10.1063/1.109278",
      "volume": "62",
      "year": "1993",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/63/5/660/18497109/660_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/63/5/660/18497109/660_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T05:58:09Z",
    "timestamp": 1706939889000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/63/5/660/62634/Electron-transport-properties-of-Si-SiGe"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1993,
        8,
        2
      ]
    ]
  },
  "references-count": 16,
  "journal-issue": {
    "issue": "5",
    "published-print": {
      "date-parts": [
        [
          1993,
          8,
          2
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.109949",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1993,
        8,
        2
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1993,
        8,
        2
      ]
    ]
  }
}