DOI: 10.1063/1.109943. Effect of crystallographic orientation on ferroelectric properties of PbZr0.2Ti0.8O3 thin films

Effect of crystallographic orientation on ferroelectric properties of PbZr0.2Ti0.8O3 thin films

10.1063/1.109943

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report on the effect of cooling rate on the crystallographic orientation and ferroelectric properties of PbZr0.2Ti0.8O3 (PZT) thin films grown on a lattice matched bottom electrode such as c-axis oriented Y-Ba-Cu-O (YBCO). The cooling rate from deposition temperature influences the crystallographic orientation of the ferroelectric c axis of the PZT film as well as the electrical properties of the YBCO bottom electrode. As the volume fraction of the ferroelectric phase with the c axis in the plane of the film becomes higher, the hysteresis loops become more rounded and the polarization values become smaller. Highly c-axis oriented films, obtained by cooling from the growth temperature at 20 °C/min, show an almost square hysteresis loop with the largest polarization values.

Bibliography

Ramesh, R., Sands, T., & Keramidas, V. G. (1993). Effect of crystallographic orientation on ferroelectric properties of PbZr0.2Ti0.8O3 thin films. Applied Physics Letters, 63(6), 731â733.

Authors 3

R. Ramesh (first)
T. Sands (additional)
V. G. Keramidas (additional)

References 16 Referenced 88

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10.1126/science.246.4936.1400 / Science (1989)
10.1126/science.247.4946.1056 / Science (1990)
{'key': '2024020305581107000_r2b', 'first-page': '414', 'volume': '9', 'year': '1991', 'journal-title': 'J. Vac. Sci. Technol.'} / J. Vac. Sci. Technol. (1991)
10.1116/1.578044 / J. Vac. Sci. Technol. A (1992)
10.1109/4.5940 / IEEE J. Solid State Circuits (1988)
10.1080/00150199008018730 / Ferroelectrics (1990)
10.1126/science.252.5008.944 / Science (1991)
10.1063/1.107488 / Appl. Phys. Lett. (1992)
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{'key': '2024020305581107000_r11', 'first-page': '2910', 'volume': '38', 'year': '1988', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1988)

Dates

Type	When
Created	23 years ago (July 26, 2002, 8:38 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 12:58 a.m.)
Indexed	4 months, 1 week ago (April 14, 2025, 5:14 p.m.)
Issued	32 years ago (Aug. 9, 1993)
Published	32 years ago (Aug. 9, 1993)
Published Print	32 years ago (Aug. 9, 1993)

Funders 0

None

BibTeX

@article{Ramesh_1993, title={Effect of crystallographic orientation on ferroelectric properties of PbZr0.2Ti0.8O3 thin films}, volume={63}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.109943}, DOI={10.1063/1.109943}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ramesh, R. and Sands, T. and Keramidas, V. G.}, year={1993}, month=aug, pages={731–733} }

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