DOI: 10.1063/1.109764. Electronic structure of aluminum nitride: Theory and experiment

Electronic structure of aluminum nitride: Theory and experiment

10.1063/1.109764

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report the results of a vacuum ultraviolet (VUV) study of single crystal and polycrystalline AlN over the range 4–40 eV and compare these with theoretical optical properties calculated from first principles using an orthogonalized linear combination of atomic orbitals in the local density approximation. The electronic structure of AlN has a two-dimensional (2D) character indicated by logarithmic divergences at 8.7 and 14 eV. These mark the centers of two sets of 2D critical points which are associated with N 2p→Al 3s transitions and Al=N→Al 3p transitions, respectively. A third feature is centered at 33 eV and associated with N 2s→Al 3d transitions.

Authors 5

S. Loughin (first)
R. H. French (additional)
W. Y. Ching (additional)
Y. N. Xu (additional)
G. A. Slack (additional)

References 29 Referenced 72

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{'key': '2024020306083034100_r28'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:38 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 1:08 a.m.)
Indexed	3 months ago (May 21, 2025, 12:48 p.m.)
Issued	31 years, 11 months ago (Aug. 30, 1993)
Published	31 years, 11 months ago (Aug. 30, 1993)
Published Print	31 years, 11 months ago (Aug. 30, 1993)

Funders 0

None

BibTeX

@article{Loughin_1993, title={Electronic structure of aluminum nitride: Theory and experiment}, volume={63}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.109764}, DOI={10.1063/1.109764}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Loughin, S. and French, R. H. and Ching, W. Y. and Xu, Y. N. and Slack, G. A.}, year={1993}, month=aug, pages={1182–1184} }

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