DOI: 10.1063/1.109740. Preparation of Pb(Zr0.54Ti0.46)O3 thin films on (100)Si using textured YBa2Cu3O7−δ and yttria-stabilized zirconia buffer layers by laser physical vapor deposition technique

Preparation of Pb(Zr0.54Ti0.46)O3 thin films on (100)Si using textured YBa2Cu3O7−δ and yttria-stabilized zirconia buffer layers by laser physical vapor deposition technique

10.1063/1.109740

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have fabricated high-quality 〈00l〉 textured Pb(Zr0.54Ti0.46)O3 (PZT) thin films on (001)Si by interposing 〈00l〉 textured YBa2Cu3O7−δ (YBCO) and yttria-stabilized zirconia (YSZ) buffer layers using pulsed laser deposition (KrF excimer laser, λ=248 nm, τ=20 ns). The YBCO layer provides a seed for PZT growth and can also act as an electrode for the PZT films, whereas YSZ provides a diffusion barrier as well as a seed for the growth of YBCO films on (001)Si. These heterostructures were characterized using x-ray diffraction, high-resolution transmission electron microscopy, and Rutherford backscattering techniques. The YSZ films were deposited in oxygen ambient (∼9×10−4 Torr) at 775 °C on (001)Si substrate having 〈001〉 YSZ//〈001〉Si texture. The YBCO thin films were deposited in situ in oxygen ambient (200 mTorr) at 650 °C. Temperature and oxygen ambient for the PZT deposition were optimized to be 530 °C and 0.4–0.6 Torr, respectively. The laser fluence to deposit this multistructure was 2.5–5 J/cm2. The 〈00l〉 textured perovskite PZT films showed a dielectric constant of 800–1000, a saturation polarization of 37.81 μC/cm2, remnant polarization of 24.38 μC/cm2, and a coercive field of 125 kV/cm. The effects of processing parameters on microstructure and ferroelectric properties of PZT films and device implications of these structures are discussed.

Bibliography

Tiwari, P., Zheleva, T., & Narayan, J. (1993). Preparation of Pb(Zr0.54Ti0.46)O3 thin films on (100)Si using textured YBa2Cu3O7âÎ´ and yttria-stabilized zirconia buffer layers by laser physical vapor deposition technique. Applied Physics Letters, 63(1), 30â32.

Authors 3

P. Tiwari (first)
T. Zheleva (additional)
J. Narayan (additional)

References 21 Referenced 27

{'key': '2024020305495094200_r1'}
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10.1063/1.89722 / Appl. Phys. Lett. (1977)
{'key': '2024020305495094200_r7', 'first-page': '736', 'volume': '30', 'year': '1986', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1986)
{'key': '2024020305495094200_r8', 'first-page': '4494', 'volume': '49', 'year': '1978', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1978)
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:38 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 12:50 a.m.)
Indexed	1 year, 6 months ago (Feb. 3, 2024, 1:27 p.m.)
Issued	32 years, 1 month ago (July 5, 1993)
Published	32 years, 1 month ago (July 5, 1993)
Published Print	32 years, 1 month ago (July 5, 1993)

Funders 0

None

BibTeX

@article{Tiwari_1993, title={Preparation of Pb(Zr0.54Ti0.46)O3 thin films on (100)Si using textured YBa2Cu3O7−δ and yttria-stabilized zirconia buffer layers by laser physical vapor deposition technique}, volume={63}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.109740}, DOI={10.1063/1.109740}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tiwari, P. and Zheleva, T. and Narayan, J.}, year={1993}, month=jul, pages={30–32} }

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