Abstract
Charge-carrier mobilities have been measured for the first time in Cd0.8Zn0.2Te single crystals using time-of-flight measurements of charge carriers produced by short (10 ns) light pulses from a frequency-doubled Nd:YAG laser (λ=532 nm). The electron mobility displayed a T−1.1 dependence on the absolute temperature T in the range 200–320 K, with a room-temperature mobility of 1350 cm2/V s. The hole mobility displayed a T−2.0 dependence in the same temperature range, with a room-temperature mobility of 120 cm2/V s. Cd0.8Zn0.2Te appears to be a very favorable material for a room-temperature electronic nuclear radiation detector.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:38 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 12:48 a.m.) |
Indexed | 4 months, 2 weeks ago (April 12, 2025, 1:07 a.m.) |
Issued | 32 years, 1 month ago (July 5, 1993) |
Published | 32 years, 1 month ago (July 5, 1993) |
Published Print | 32 years, 1 month ago (July 5, 1993) |
@article{Burshtein_1993, title={Charge-carrier mobilities in Cd0.8Zn0.2Te single crystals used as nuclear radiation detectors}, volume={63}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.109726}, DOI={10.1063/1.109726}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Burshtein, Z. and Jayatirtha, H. N. and Burger, A. and Butler, J. F. and Apotovsky, B. and Doty, F. P.}, year={1993}, month=jul, pages={102–104} }