DOI: 10.1063/1.109549. Metal semiconductor field effect transistor based on single crystal GaN

Metal semiconductor field effect transistor based on single crystal GaN

10.1063/1.109549

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

In this letter we report the fabrication and characterization of a metal semiconductor field effect transistor (MESFET) based on single crystal GaN. The GaN layer was deposited over sapphire substrate using low pressure metalorganic chemical vapor deposition. MESFET devices were fabricated on isolated mesas using TiAu for the source and drain ohmic contacts and silver for the gate Schottky. For devices with a gate length of 4 μm (channel opening, i.e., source to drain separation of 10 μm), a transconductance of 23 mS/mm was obtained at −1 V gate bias. Complete pinch-off was observed for a gate potential of −12 V.

Bibliography

Asif Khan, M., Kuznia, J. N., Bhattarai, A. R., & Olson, D. T. (1993). Metal semiconductor field effect transistor based on single crystal GaN. Applied Physics Letters, 62(15), 1786â1787.

Authors 4

M. Asif Khan (first)
J. N. Kuznia (additional)
A. R. Bhattarai (additional)
D. T. Olson (additional)

References 12 Referenced 313

10.1063/1.104575 / Appl. Phys. Lett. (1991)
10.1143/JJAP.29.L205 / Jpn. J. Appl. Phys. (1990)
10.1063/1.329998 / J. Appl. Phys. (1982)
10.1016/S0022-3697(73)80090-3 / J. Phys. Chem. Solids (1973)
10.1007/BF02660408 / J. Electron. Mater. (1992)
10.1063/1.105163 / Appl. Phys. Lett. (1991)
10.1063/1.104886 / Appl. Phys. Lett. (1991)
10.1063/1.106798 / Appl. Phys. Lett. (1992)
10.1063/1.107484 / Appl. Phys. Lett. (1992)
10.1063/1.108144 / Appl. Phys. Lett. (1992)
10.1063/1.106819 / Appl. Phys. Lett. (1992)
{'key': '2024020305231538300_r12', 'first-page': '600', 'volume': 'ED-25', 'year': '1978', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1978)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:34 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 12:23 a.m.)
Indexed	2 months ago (June 24, 2025, 7:28 a.m.)
Issued	32 years, 4 months ago (April 12, 1993)
Published	32 years, 4 months ago (April 12, 1993)
Published Print	32 years, 4 months ago (April 12, 1993)

Funders 0

None

BibTeX

@article{Asif_Khan_1993, title={Metal semiconductor field effect transistor based on single crystal GaN}, volume={62}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.109549}, DOI={10.1063/1.109549}, number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Asif Khan, M. and Kuznia, J. N. and Bhattarai, A. R. and Olson, D. T.}, year={1993}, month=apr, pages={1786–1787} }

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