Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Thin films of bismuth titanate, Bi4Ti3O12, prepared by the metalorganic solution deposition technique and rapid thermally annealed at 700 °C for 20 s have shown good ferroelectric switching, fatigue, and retention characteristics. A switching time of 180 ns was measured for a 0.5 μm thick capacitor with an electrode area of 2.83×10−3 cm2. The switching degradation of the polarization state or fatigue was not significant, at least up to 1010 bipolar switching cycles. The films exhibited good memory retention characteristics after about 106 s.

Bibliography

Joshi, P. C., & Krupanidhi, S. B. (1993). Switching, fatigue, and retention in ferroelectric Bi4Ti3O12 thin films. Applied Physics Letters, 62(16), 1928–1930.

Authors 2
  1. P. C. Joshi (first)
  2. S. B. Krupanidhi (additional)
References 15 Referenced 136
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Dates
Type When
Created 23 years ago (July 26, 2002, 9:34 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 12:24 a.m.)
Indexed 3 months, 2 weeks ago (May 9, 2025, 1:44 p.m.)
Issued 32 years, 4 months ago (April 19, 1993)
Published 32 years, 4 months ago (April 19, 1993)
Published Print 32 years, 4 months ago (April 19, 1993)
Funders 0

None

@article{Joshi_1993, title={Switching, fatigue, and retention in ferroelectric Bi4Ti3O12 thin films}, volume={62}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.109547}, DOI={10.1063/1.109547}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Joshi, P. C. and Krupanidhi, S. B.}, year={1993}, month=apr, pages={1928–1930} }