Abstract
Thin films of bismuth titanate, Bi4Ti3O12, prepared by the metalorganic solution deposition technique and rapid thermally annealed at 700 °C for 20 s have shown good ferroelectric switching, fatigue, and retention characteristics. A switching time of 180 ns was measured for a 0.5 μm thick capacitor with an electrode area of 2.83×10−3 cm2. The switching degradation of the polarization state or fatigue was not significant, at least up to 1010 bipolar switching cycles. The films exhibited good memory retention characteristics after about 106 s.
References
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Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 9:34 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 12:24 a.m.) |
Indexed | 3 months, 2 weeks ago (May 9, 2025, 1:44 p.m.) |
Issued | 32 years, 4 months ago (April 19, 1993) |
Published | 32 years, 4 months ago (April 19, 1993) |
Published Print | 32 years, 4 months ago (April 19, 1993) |
@article{Joshi_1993, title={Switching, fatigue, and retention in ferroelectric Bi4Ti3O12 thin films}, volume={62}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.109547}, DOI={10.1063/1.109547}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Joshi, P. C. and Krupanidhi, S. B.}, year={1993}, month=apr, pages={1928–1930} }