DOI: 10.1063/1.109278. Electron transport properties of a strained Si layer on a relaxed Si1−<i>x</i>Ge<i>x</i> substrate by Monte Carlo simulation

Electron transport properties of a strained Si layer on a relaxed Si1−xGex substrate by Monte Carlo simulation

10.1063/1.109278

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The in-plane transport properties of a strained (100) Si layer on a relaxed Si1−xGex substrate are studied with an ensemble Monte Carlo technique. Similar velocity (-field) characteristics are found for strained Si with any valley splitting energy ΔE≥0.1 eV. These phonon-limited electron mobilities reach 4000 cm2/V s at 300 K, and 23 000 cm2/V s at 77 K. There is only a slight increase in the saturation velocity at both temperatures. However, a significant overshoot peak transient velocity is found to depend upon ΔE, and for ΔE=0.4 eV, reaches 4.1×107 cm/s at 300 K, and 5.2×107 cm/s at 77 K.

Bibliography

Miyata, H., Yamada, T., & Ferry, D. K. (1993). Electron transport properties of a strained Si layer on a relaxed Si1âxGex substrate by Monte Carlo simulation. Applied Physics Letters, 62(21), 2661â2663.

Authors 3

H. Miyata (first)
Toshishige Yamada (additional)
D. K. Ferry (additional)

References 11 Referenced 87

10.1063/1.106246 / Appl. Phys. Lett. (1991)
10.1109/55.145036 / IEEE Trans. Electron Device Lett. (1992)
10.1103/PhysRevB.46.4344 / Phys. Rev. B. (1992)
10.1103/PhysRevLett.54.2441 / Phys. Rev. Lett. (1985)
{'key': '2024020305345538200_r4a', 'first-page': '1696', 'volume': '22', 'year': '1985', 'journal-title': 'IEEE J. Quantum Electron.'} / IEEE J. Quantum Electron. (1985)
10.1103/RevModPhys.54.437 / Rev. Mod. Phys. (1982)
{'key': '2024020305345538200_r6'}
10.1103/RevModPhys.55.645 / Rev. Mod. Phys. (1983)
{'key': '2024020305345538200_r8'}
{'key': '2024020305345538200_r9'}
10.1088/0268-1242/2/2/009 / Semicond. Sci. Technol. (1987)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:38 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 12:35 a.m.)
Indexed	4 months ago (April 19, 2025, 1:07 a.m.)
Issued	32 years, 3 months ago (May 24, 1993)
Published	32 years, 3 months ago (May 24, 1993)
Published Print	32 years, 3 months ago (May 24, 1993)

Funders 0

None

BibTeX

@article{Miyata_1993, title={Electron transport properties of a strained Si layer on a relaxed Si1−xGex substrate by Monte Carlo simulation}, volume={62}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.109278}, DOI={10.1063/1.109278}, number={21}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Miyata, H. and Yamada, Toshishige and Ferry, D. K.}, year={1993}, month=may, pages={2661–2663} }

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