Abstract
In this letter, the spatial correlation model has been used for interpreting the line shapes of the first-order longitudinal-optical phonon Raman spectra of ZnSe/GaAs epitaxial layers. The good agreement between theoretical line shapes and the experiment measurements was illustrated for the samples grown by the molecular beam epitaxy (MBE), hot wall epitaxy (HWE), and hot wall beam epitaxy (HWBE).
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:36 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 12:37 a.m.) |
Indexed | 1 year, 6 months ago (Feb. 7, 2024, 7:40 p.m.) |
Issued | 32 years, 2 months ago (May 31, 1993) |
Published | 32 years, 2 months ago (May 31, 1993) |
Published Print | 32 years, 2 months ago (May 31, 1993) |
@article{Wang_1993, title={Quality of ZnSe/GaAs epilayers studied by spatial correlation model of Raman scattering}, volume={62}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.109229}, DOI={10.1063/1.109229}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wang, J. and Yao, W. H. and Wang, J. B. and Lu, H. Q. and Sun, H. H. and Wang, X. and Pang, Z. L.}, year={1993}, month=may, pages={2845–2847} }