DOI: 10.1063/1.109101. Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films

Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films

10.1063/1.109101

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The dependence of defect passivation in undoped polycrystalline silicon on hydrogenation conditions (i.e., time and temperature) was examined. At long hydrogenation times the spin density NS saturates. The saturation value of NS depends strongly on the hydrogenation temperature. The lowest residual spin density was obtained at 350 °C. Model calculations of the time and temperature dependence of the defect passivation suggest that the amount of hydrogen necessary for defect passivation exceeds the density of grain boundary defects by a factor that is significantly larger than unity and which depends on the hydrogenation temperature.

Bibliography

Nickel, N. H., Johnson, N. M., & Jackson, W. B. (1993). Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films. Applied Physics Letters, 62(25), 3285â3287.

Authors 3

N. H. Nickel (first)
N. M. Johnson (additional)
W. B. Jackson (additional)

References 14 Referenced 128

10.1063/1.92934 / Appl. Phys. Lett. (1982)
{'key': '2024020305471455900_r2', 'first-page': '159', 'volume': 'EDL-1', 'year': '1980', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1980)
{'key': '2024020305471455900_r3', 'first-page': '1209', 'volume': '137&138', 'year': '1991', 'journal-title': 'J. Non-Cryst. Solids'} / J. Non-Cryst. Solids (1991)
10.1063/1.339329 / J. Appl. Phys. (1987)
{'key': '2024020305471455900_r5', 'first-page': '443', 'volume': '63', 'year': '1989', 'journal-title': 'Philos. Mag. B'} / Philos. Mag. B (1989)
10.1063/1.108446 / Appl. Phys. Lett. (1992)
{'key': '2024020305471455900_r7'}
{'key': '2024020305471455900_r8'}
{'key': '2024020305471455900_r9', 'first-page': '291', 'volume': '35&36', 'year': '1980', 'journal-title': 'J. Non-Cryst. Solids'} / J. Non-Cryst. Solids (1980)
10.1063/1.94278 / Appl. Phys. Lett. (1983)
10.1016/0921-4526(91)90123-V / Physica B (1991)
10.1103/PhysRevB.46.4308 / Phys. Rev. B (1992)
10.1103/PhysRevLett.62.937 / Phys. Rev. Lett. (1989)
10.1103/PhysRevB.35.4166 / Phys. Rev. B (1987)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:36 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 12:47 a.m.)
Indexed	2 months, 2 weeks ago (June 18, 2025, 3:49 a.m.)
Issued	32 years, 2 months ago (June 21, 1993)
Published	32 years, 2 months ago (June 21, 1993)
Published Print	32 years, 2 months ago (June 21, 1993)

Funders 0

None

BibTeX

@article{Nickel_1993, title={Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films}, volume={62}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.109101}, DOI={10.1063/1.109101}, number={25}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Nickel, N. H. and Johnson, N. M. and Jackson, W. B.}, year={1993}, month=jun, pages={3285–3287} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        6,
        18
      ]
    ],
    "date-time": "2025-06-18T07:49:52Z",
    "timestamp": 1750232992468
  },
  "reference-count": 14,
  "publisher": "AIP Publishing",
  "issue": "25",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1993,
        6,
        21
      ]
    ]
  },
  "abstract": "<jats:p>The dependence of defect passivation in undoped polycrystalline silicon on hydrogenation conditions (i.e., time and temperature) was examined. At long hydrogenation times the spin density NS saturates. The saturation value of NS depends strongly on the hydrogenation temperature. The lowest residual spin density was obtained at 350\u2009\u00b0C. Model calculations of the time and temperature dependence of the defect passivation suggest that the amount of hydrogen necessary for defect passivation exceeds the density of grain boundary defects by a factor that is significantly larger than unity and which depends on the hydrogenation temperature.</jats:p>",
  "DOI": "10.1063/1.109101",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:36:08Z",
    "timestamp": 1027690568000
  },
  "page": "3285-3287",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 128,
  "title": "Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films",
  "prefix": "10.1063",
  "volume": "62",
  "author": [
    {
      "given": "N. H.",
      "family": "Nickel",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304"
        }
      ]
    },
    {
      "given": "N. M.",
      "family": "Johnson",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304"
        }
      ]
    },
    {
      "given": "W. B.",
      "family": "Jackson",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020305471455900_r1",
      "doi-asserted-by": "crossref",
      "first-page": "882",
      "DOI": "10.1063/1.92934",
      "volume": "40",
      "year": "1982",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020305471455900_r2",
      "first-page": "159",
      "volume": "EDL-1",
      "year": "1980",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2024020305471455900_r3",
      "first-page": "1209",
      "volume": "137&138",
      "year": "1991",
      "journal-title": "J. Non-Cryst. Solids"
    },
    {
      "key": "2024020305471455900_r4",
      "doi-asserted-by": "crossref",
      "first-page": "3244",
      "DOI": "10.1063/1.339329",
      "volume": "62",
      "year": "1987",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020305471455900_r5",
      "first-page": "443",
      "volume": "63",
      "year": "1989",
      "journal-title": "Philos. Mag. B"
    },
    {
      "key": "2024020305471455900_r6",
      "doi-asserted-by": "crossref",
      "first-page": "1670",
      "DOI": "10.1063/1.108446",
      "volume": "61",
      "year": "1992",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020305471455900_r7"
    },
    {
      "key": "2024020305471455900_r8"
    },
    {
      "key": "2024020305471455900_r9",
      "first-page": "291",
      "volume": "35&36",
      "year": "1980",
      "journal-title": "J. Non-Cryst. Solids"
    },
    {
      "key": "2024020305471455900_r10",
      "doi-asserted-by": "crossref",
      "first-page": "195",
      "DOI": "10.1063/1.94278",
      "volume": "43",
      "year": "1983",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020305471455900_r11",
      "doi-asserted-by": "crossref",
      "first-page": "197",
      "DOI": "10.1016/0921-4526(91)90123-V",
      "volume": "170",
      "year": "1991",
      "journal-title": "Physica B"
    },
    {
      "key": "2024020305471455900_r12",
      "doi-asserted-by": "crossref",
      "first-page": "4308",
      "DOI": "10.1103/PhysRevB.46.4308",
      "volume": "46",
      "year": "1992",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020305471455900_r13",
      "doi-asserted-by": "crossref",
      "first-page": "937",
      "DOI": "10.1103/PhysRevLett.62.937",
      "volume": "62",
      "year": "1989",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024020305471455900_r14",
      "doi-asserted-by": "crossref",
      "first-page": "4166",
      "DOI": "10.1103/PhysRevB.35.4166",
      "volume": "35",
      "year": "1987",
      "journal-title": "Phys. Rev. B"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/62/25/3285/18496316/3285_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/62/25/3285/18496316/3285_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T05:47:24Z",
    "timestamp": 1706939244000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/62/25/3285/526492/Hydrogen-passivation-of-grain-boundary-defects-in"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1993,
        6,
        21
      ]
    ]
  },
  "references-count": 14,
  "journal-issue": {
    "issue": "25",
    "published-print": {
      "date-parts": [
        [
          1993,
          6,
          21
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.109101",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1993,
        6,
        21
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1993,
        6,
        21
      ]
    ]
  }
}