DOI: 10.1063/1.109032. Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging, and focused ion beam sputtering

Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging, and focused ion beam sputtering

10.1063/1.109032

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The microstructure of semiconductor laser diodes is studied using a combination of focused ion beam sputtering, electroluminescence imaging, and cross-sectional transmission electron microscopy. Careful control of focused ion beam sputtering allows fabrication of high quality thin membranes for transmission electron microscope imaging, which can be located to submicron accuracy at a given position on the laser active stripe. By correlation with electroluminescence imaging, the membrane may then be positioned at an optically degraded region of the active stripe. In addition, imaging of the complete cross-sectional laser structure, from substrate to surface contact layers is possible. The applications of these techniques to studies of laser degradation mechanisms are demonstrated and discussed.

Bibliography

Hull, R., Bahnck, D., Stevie, F. A., Koszi, L. A., & Chu, S. N. G. (1993). Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging, and focused ion beam sputtering. Applied Physics Letters, 62(26), 3408â3410.

Authors 5

R. Hull (first)
D. Bahnck (additional)
F. A. Stevie (additional)
L. A. Koszi (additional)
S. N. G. Chu (additional)

References 8 Referenced 20

10.1149/1.2095535 / J. Electrochem. Soc. (1988)
10.1149/1.2115378 / J. Electrochem. Soc. (1984)
{'key': '2024020305452846300_r3', 'first-page': '109', 'volume': '55', 'year': '1987', 'journal-title': 'Philos. Mag. Lett.'} / Philos. Mag. Lett. (1987)
10.1016/0304-3991(89)90212-X / Ultramicroscopy (1989)
{'key': '2024020305452846300_r5', 'first-page': '501', 'volume': '100', 'year': '1989', 'journal-title': 'Inst. Phys. Conf. Ser.'} / Inst. Phys. Conf. Ser. (1989)
10.1016/0167-9317(90)90140-O / Microelectron. Eng. (1990)
10.1116/1.586415 / J. Vac. Sci. Technol. B (1992)
10.1063/1.340100 / J. Appl. Phys. (1988)

Dates

Type	When
Created	23 years ago (July 26, 2002, 8:58 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 12:45 a.m.)
Indexed	11 months, 1 week ago (Sept. 9, 2024, 3:22 p.m.)
Issued	32 years, 1 month ago (June 28, 1993)
Published	32 years, 1 month ago (June 28, 1993)
Published Print	32 years, 1 month ago (June 28, 1993)

Funders 0

None

BibTeX

@article{Hull_1993, title={Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging, and focused ion beam sputtering}, volume={62}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.109032}, DOI={10.1063/1.109032}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hull, R. and Bahnck, D. and Stevie, F. A. and Koszi, L. A. and Chu, S. N. G.}, year={1993}, month=jun, pages={3408–3410} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        9,
        9
      ]
    ],
    "date-time": "2024-09-09T19:22:28Z",
    "timestamp": 1725909748783
  },
  "reference-count": 8,
  "publisher": "AIP Publishing",
  "issue": "26",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1993,
        6,
        28
      ]
    ]
  },
  "abstract": "<jats:p>The microstructure of semiconductor laser diodes is studied using a combination of focused ion beam sputtering, electroluminescence imaging, and cross-sectional transmission electron microscopy. Careful control of focused ion beam sputtering allows fabrication of high quality thin membranes for transmission electron microscope imaging, which can be located to submicron accuracy at a given position on the laser active stripe. By correlation with electroluminescence imaging, the membrane may then be positioned at an optically degraded region of the active stripe. In addition, imaging of the complete cross-sectional laser structure, from substrate to surface contact layers is possible. The applications of these techniques to studies of laser degradation mechanisms are demonstrated and discussed.</jats:p>",
  "DOI": "10.1063/1.109032",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T12:58:15Z",
    "timestamp": 1027688295000
  },
  "page": "3408-3410",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 20,
  "title": "Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging, and focused ion beam sputtering",
  "prefix": "10.1063",
  "volume": "62",
  "author": [
    {
      "given": "R.",
      "family": "Hull",
      "sequence": "first",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974"
        }
      ]
    },
    {
      "given": "D.",
      "family": "Bahnck",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974"
        }
      ]
    },
    {
      "given": "F. A.",
      "family": "Stevie",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974"
        }
      ]
    },
    {
      "given": "L. A.",
      "family": "Koszi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974"
        }
      ]
    },
    {
      "given": "S. N. G.",
      "family": "Chu",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020305452846300_r1",
      "doi-asserted-by": "crossref",
      "first-page": "11C",
      "DOI": "10.1149/1.2095535",
      "volume": "135",
      "year": "1988",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020305452846300_r2",
      "doi-asserted-by": "crossref",
      "first-page": "2663",
      "DOI": "10.1149/1.2115378",
      "volume": "131",
      "year": "1984",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020305452846300_r3",
      "first-page": "109",
      "volume": "55",
      "year": "1987",
      "journal-title": "Philos. Mag. Lett."
    },
    {
      "key": "2024020305452846300_r4",
      "doi-asserted-by": "crossref",
      "first-page": "183",
      "DOI": "10.1016/0304-3991(89)90212-X",
      "volume": "31",
      "year": "1989",
      "journal-title": "Ultramicroscopy"
    },
    {
      "key": "2024020305452846300_r5",
      "first-page": "501",
      "volume": "100",
      "year": "1989",
      "journal-title": "Inst. Phys. Conf. Ser."
    },
    {
      "key": "2024020305452846300_r6",
      "doi-asserted-by": "crossref",
      "first-page": "409",
      "DOI": "10.1016/0167-9317(90)90140-O",
      "volume": "11",
      "year": "1990",
      "journal-title": "Microelectron. Eng."
    },
    {
      "key": "2024020305452846300_r7",
      "doi-asserted-by": "crossref",
      "first-page": "575",
      "DOI": "10.1116/1.586415",
      "volume": "10",
      "year": "1992",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024020305452846300_r8",
      "doi-asserted-by": "crossref",
      "first-page": "611",
      "DOI": "10.1063/1.340100",
      "volume": "63",
      "year": "1988",
      "journal-title": "J. Appl. Phys."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/62/26/3408/18496232/3408_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/62/26/3408/18496232/3408_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T05:45:48Z",
    "timestamp": 1706939148000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/62/26/3408/62320/Microscopic-studies-of-semiconductor-lasers"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1993,
        6,
        28
      ]
    ]
  },
  "references-count": 8,
  "journal-issue": {
    "issue": "26",
    "published-print": {
      "date-parts": [
        [
          1993,
          6,
          28
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.109032",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1993,
        6,
        28
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1993,
        6,
        28
      ]
    ]
  }
}