Abstract
It is shown that backscatter Kikuchi diffraction in the scanning electron microscope can be used for the determination of elastic strain with μm resolution. From the shift of Kikuchi bands in backscatter Kikuchi diffraction patterns of epitaxial Si1−xGex layers on Si(100) the perpendicular elastic strain was determined to be 2.5% for x=0.34 and at 1.0% for x=0.16 with an accuracy of about 0.1%. The values found on a μm scale were in good agreement with high-resolution x-ray diffraction measurements averaging over mm distances.
References
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Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 9:38 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 12:14 a.m.) |
Indexed | 4 weeks ago (July 24, 2025, 8:30 a.m.) |
Issued | 32 years, 5 months ago (March 8, 1993) |
Published | 32 years, 5 months ago (March 8, 1993) |
Published Print | 32 years, 5 months ago (March 8, 1993) |
@article{Troost_1993, title={Microscale elastic-strain determination by backscatter Kikuchi diffraction in the scanning electron microscope}, volume={62}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.108758}, DOI={10.1063/1.108758}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Troost, K. Z. and van der Sluis, P. and Gravesteijn, D. J.}, year={1993}, month=mar, pages={1110–1112} }