DOI: 10.1063/1.108633. Model for dielectric growth on silicon in a nitrous oxide environment

Model for dielectric growth on silicon in a nitrous oxide environment

10.1063/1.108633

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

In this letter, a model for growth kinetics of ultrathin dielectrics obtained by oxidation of silicon in a nitrous oxide environment is proposed. The model assumes that the oxide growth is limited by time-dependent interface reaction, which is slowed down and eventually completely blocked as oxide growth sites are neutralized by nitrogen atoms. The model fits experimental data extremely well, both with time and temperature.

Bibliography

Dimitrijev, S., Sweatman, D., & Harrison, H. B. (1993). Model for dielectric growth on silicon in a nitrous oxide environment. Applied Physics Letters, 62(13), 1539â1540.

Authors 3

Sima Dimitrijev (first)
Denis Sweatman (additional)
H. Barry Harrison (additional)

References 7 Referenced 32

{'key': '2024020305165319400_r1'}
10.1063/1.103550 / Appl. Phys. Lett. (1990)
10.1049/el:19900966 / Electron. Lett. (1990)
{'key': '2024020305165319400_r4', 'first-page': '495', 'volume': 'EDL-12', 'year': '1991', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1991)
10.1063/1.349701 / J. Appl. Phys. (1991)
{'key': '2024020305165319400_r6', 'first-page': '402', 'volume': 'EDL-13', 'year': '1992', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1992)
10.1063/1.1713945 / J. Appl. Phys. (1965)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:34 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 12:16 a.m.)
Indexed	1 year, 6 months ago (Feb. 7, 2024, 7:29 p.m.)
Issued	32 years, 5 months ago (March 29, 1993)
Published	32 years, 5 months ago (March 29, 1993)
Published Print	32 years, 5 months ago (March 29, 1993)

Funders 0

None

BibTeX

@article{Dimitrijev_1993, title={Model for dielectric growth on silicon in a nitrous oxide environment}, volume={62}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.108633}, DOI={10.1063/1.108633}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Dimitrijev, Sima and Sweatman, Denis and Harrison, H. Barry}, year={1993}, month=mar, pages={1539–1540} }

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