DOI: 10.1063/1.108446. Hydrogen diffusion in polycrystalline silicon thin films

Hydrogen diffusion in polycrystalline silicon thin films

10.1063/1.108446

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Grain boundaries in undoped polycrystalline silicon (poly-Si) thin films are shown to act as efficient hydrogen traps rather than as paths of enhanced diffusion. A comparison of hydrogen diffusion in poly-Si and undoped single-crystal silicon (c-Si) demonstrates that the diffusion in poly-Si is significantly suppressed compared to c-Si. These results have significant implications for hydrogenation of poly-Si thin-film transistors.

Bibliography

Jackson, W. B., Johnson, N. M., Tsai, C. C., Wu, I.-W., Chiang, A., & Smith, D. (1992). Hydrogen diffusion in polycrystalline silicon thin films. Applied Physics Letters, 61(14), 1670â1672.

Authors 6

W. B. Jackson (first)
N. M. Johnson (additional)
C. C. Tsai (additional)
I.-W. Wu (additional)
A. Chiang (additional)
D. Smith (additional)

References 20 Referenced 75

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10.1109/16.19936 / IEEE Trans. Electron Devices (1989)
{'key': '2024020304364027000_r3', 'first-page': '570', 'volume': 'EDL-6', 'year': '1985', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1985)
{'key': '2024020304364027000_r4', 'first-page': '123', 'volume': 'EDL-10', 'year': '1989', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1989)
{'key': '2024020304364027000_r5'}
10.1063/1.97247 / Appl. Phys. Lett. (1986)
10.1103/PhysRevB.39.10791 / Phys. Rev. B (1989)
10.1103/PhysRevB.23.6648 / Phys. Rev. B (1981)
10.1002/pssa.2210840118 / Phys. Status Solidi A (1984)
10.1063/1.92934 / Appl. Phys. Lett. (1982)
10.1149/1.2085426 / J. Electrochem. Soc. (1991)
{'key': '2024020304364027000_r12'}
10.1063/1.343327 / J. Appl. Phys. (1989)
10.1103/PhysRevB.43.14297 / Phys. Rev. B (1991)
10.1103/PhysRevB.35.4166 / Phys. Rev. B (1987)
{'key': '2024020304364027000_r16'}
10.1016/0022-3093(84)90013-9 / J. Non-Cryst. Solids (1984)
{'key': '2024020304364027000_r18', 'first-page': '1062', 'volume': '14', 'year': '1962', 'journal-title': 'J. Chem. Phys.'} / J. Chem. Phys. (1962)
{'key': '2024020304364027000_r18a', 'first-page': '35', 'volume': '5', 'year': '1964', 'journal-title': 'Phys. Chem. Glasses'} / Phys. Chem. Glasses (1964)
10.1063/1.324180 / J. Appl. Phys. (1977)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:36 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 11:36 p.m.)
Indexed	1 month, 1 week ago (July 19, 2025, 11:39 p.m.)
Issued	32 years, 10 months ago (Oct. 5, 1992)
Published	32 years, 10 months ago (Oct. 5, 1992)
Published Print	32 years, 10 months ago (Oct. 5, 1992)

Funders 0

None

BibTeX

@article{Jackson_1992, title={Hydrogen diffusion in polycrystalline silicon thin films}, volume={61}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.108446}, DOI={10.1063/1.108446}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Jackson, W. B. and Johnson, N. M. and Tsai, C. C. and Wu, I.-W. and Chiang, A. and Smith, D.}, year={1992}, month=oct, pages={1670–1672} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        20
      ]
    ],
    "date-time": "2025-07-20T03:39:36Z",
    "timestamp": 1752982776487
  },
  "reference-count": 20,
  "publisher": "AIP Publishing",
  "issue": "14",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1992,
        10,
        5
      ]
    ]
  },
  "abstract": "<jats:p>Grain boundaries in undoped polycrystalline silicon (poly-Si) thin films are shown to act as efficient hydrogen traps rather than as paths of enhanced diffusion. A comparison of hydrogen diffusion in poly-Si and undoped single-crystal silicon (c-Si) demonstrates that the diffusion in poly-Si is significantly suppressed compared to c-Si. These results have significant implications for hydrogenation of poly-Si thin-film transistors.</jats:p>",
  "DOI": "10.1063/1.108446",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:36:40Z",
    "timestamp": 1027690600000
  },
  "page": "1670-1672",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 75,
  "title": "Hydrogen diffusion in polycrystalline silicon thin films",
  "prefix": "10.1063",
  "volume": "61",
  "author": [
    {
      "given": "W. B.",
      "family": "Jackson",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304"
        }
      ]
    },
    {
      "given": "N. M.",
      "family": "Johnson",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304"
        }
      ]
    },
    {
      "given": "C. C.",
      "family": "Tsai",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304"
        }
      ]
    },
    {
      "given": "I.-W.",
      "family": "Wu",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304"
        }
      ]
    },
    {
      "given": "A.",
      "family": "Chiang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304"
        }
      ]
    },
    {
      "given": "D.",
      "family": "Smith",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020304364027000_r1",
      "first-page": "159",
      "volume": "EDL-1",
      "year": "1980",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2024020304364027000_r2",
      "doi-asserted-by": "crossref",
      "first-page": "351",
      "DOI": "10.1109/16.19936",
      "volume": "36",
      "year": "1989",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2024020304364027000_r3",
      "first-page": "570",
      "volume": "EDL-6",
      "year": "1985",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2024020304364027000_r4",
      "first-page": "123",
      "volume": "EDL-10",
      "year": "1989",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2024020304364027000_r5"
    },
    {
      "key": "2024020304364027000_r6",
      "doi-asserted-by": "crossref",
      "first-page": "1620",
      "DOI": "10.1063/1.97247",
      "volume": "49",
      "year": "1986",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020304364027000_r7",
      "doi-asserted-by": "crossref",
      "first-page": "10791",
      "DOI": "10.1103/PhysRevB.39.10791",
      "volume": "39",
      "year": "1989",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020304364027000_r8",
      "doi-asserted-by": "crossref",
      "first-page": "6648",
      "DOI": "10.1103/PhysRevB.23.6648",
      "volume": "23",
      "year": "1981",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020304364027000_r9",
      "doi-asserted-by": "crossref",
      "first-page": "149",
      "DOI": "10.1002/pssa.2210840118",
      "volume": "84",
      "year": "1984",
      "journal-title": "Phys. Status Solidi A"
    },
    {
      "key": "2024020304364027000_r10",
      "doi-asserted-by": "crossref",
      "first-page": "882",
      "DOI": "10.1063/1.92934",
      "volume": "40",
      "year": "1982",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020304364027000_r11",
      "doi-asserted-by": "crossref",
      "first-page": "3420",
      "DOI": "10.1149/1.2085426",
      "volume": "138",
      "year": "1991",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020304364027000_r12"
    },
    {
      "key": "2024020304364027000_r13",
      "doi-asserted-by": "crossref",
      "first-page": "4036",
      "DOI": "10.1063/1.343327",
      "volume": "65",
      "year": "1989",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020304364027000_r14",
      "doi-asserted-by": "crossref",
      "first-page": "14297",
      "DOI": "10.1103/PhysRevB.43.14297",
      "volume": "43",
      "year": "1991",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020304364027000_r15",
      "doi-asserted-by": "crossref",
      "first-page": "4166",
      "DOI": "10.1103/PhysRevB.35.4166",
      "volume": "35",
      "year": "1987",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020304364027000_r16"
    },
    {
      "key": "2024020304364027000_r17",
      "doi-asserted-by": "crossref",
      "first-page": "301",
      "DOI": "10.1016/0022-3093(84)90013-9",
      "volume": "68",
      "year": "1984",
      "journal-title": "J. Non-Cryst. Solids"
    },
    {
      "key": "2024020304364027000_r18",
      "first-page": "1062",
      "volume": "14",
      "year": "1962",
      "journal-title": "J. Chem. Phys."
    },
    {
      "key": "2024020304364027000_r18a",
      "first-page": "35",
      "volume": "5",
      "year": "1964",
      "journal-title": "Phys. Chem. Glasses"
    },
    {
      "key": "2024020304364027000_r19",
      "doi-asserted-by": "crossref",
      "first-page": "3387",
      "DOI": "10.1063/1.324180",
      "volume": "48",
      "year": "1977",
      "journal-title": "J. Appl. Phys."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/61/14/1670/18491440/1670_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/61/14/1670/18491440/1670_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T04:36:57Z",
    "timestamp": 1706935017000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/61/14/1670/524302/Hydrogen-diffusion-in-polycrystalline-silicon-thin"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1992,
        10,
        5
      ]
    ]
  },
  "references-count": 20,
  "journal-issue": {
    "issue": "14",
    "published-print": {
      "date-parts": [
        [
          1992,
          10,
          5
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.108446",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1992,
        10,
        5
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1992,
        10,
        5
      ]
    ]
  }
}