Abstract
The shape and crystallography of fatal electromigration voids in near-bamboo Al-2 wt % Cu thin-film conductors were studied with transmission electron microscopy. Fatal voids were typically slit shaped and intragranular. Voids formed with {111} faces and with the slit length parallel to a 〈022〉 direction. The void faces were inclined and resided in grains of varying surface crystallographic orientation. Void morphology was independent of initial precipitate condition.
References
12
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:49 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 2, 2024, 11:42 p.m.) |
Indexed | 3 weeks ago (Aug. 6, 2025, 9:59 a.m.) |
Issued | 32 years, 9 months ago (Nov. 2, 1992) |
Published | 32 years, 9 months ago (Nov. 2, 1992) |
Published Print | 32 years, 9 months ago (Nov. 2, 1992) |
@article{Rose_1992, title={Fatal electromigration voids in narrow aluminum-copper interconnect}, volume={61}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.108284}, DOI={10.1063/1.108284}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rose, J. H.}, year={1992}, month=nov, pages={2170–2172} }