Abstract
Destructive breakdown in silicon dioxide is shown to be strongly correlated to the oxide degradation caused by hot-electron-induced defect production and charge trapping near the interfaces of the films. Two well-defined transitions in the charge-to-breakdown data as a function of field and oxide thickness are shown to coincide with the onset of trap creation and impact ionization by electrons with energies exceeding 2 and 9 eV, respectively.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:34 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 2, 2024, 11:45 p.m.) |
Indexed | 1 month, 3 weeks ago (July 4, 2025, 7:25 a.m.) |
Issued | 32 years, 9 months ago (Nov. 9, 1992) |
Published | 32 years, 9 months ago (Nov. 9, 1992) |
Published Print | 32 years, 9 months ago (Nov. 9, 1992) |
@article{DiMaria_1992, title={Degradation and breakdown of silicon dioxide films on silicon}, volume={61}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.108233}, DOI={10.1063/1.108233}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={DiMaria, D. J. and Arnold, D. and Cartier, E.}, year={1992}, month=nov, pages={2329–2331} }