Crossref
journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract
Using a high-performance optoelectronic THz beam system for time-domain spectroscopy, we have measured the absorption and index of refraction of N- and P-type doped GaAs from low frequencies to 4 THz. From these measurements the complex conductance was obtained over the same frequency range. All of the results were well fit by Drude theory.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:34 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 2, 2024, 11:25 p.m.) |
Indexed | 1 week, 3 days ago (Aug. 23, 2025, 9:44 p.m.) |
Issued | 33 years ago (Aug. 17, 1992) |
Published | 33 years ago (Aug. 17, 1992) |
Published Print | 33 years ago (Aug. 17, 1992) |
@article{Katzenellenbogen_1992, title={Electrical characterization to 4 THz of N- and P-type GaAs using THz time-domain spectroscopy}, volume={61}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.107762}, DOI={10.1063/1.107762}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Katzenellenbogen, N. and Grischkowsky, D.}, year={1992}, month=aug, pages={840–842} }