DOI: 10.1063/1.107514. Temperature-dependence of the growth orientation of atomic layer growth MgO

Temperature-dependence of the growth orientation of atomic layer growth MgO

10.1063/1.107514

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

High-quality MgO thin films deposited on Si(111) substrates by atomic layer growth (ALG) are formed by a hydrolysis surface reaction of Mg(C2H5)2 and H2O. The growth orientation of MgO changes from (111) to (100), when the temperature of the silicon substrate changes from 600 to 900 °C. The growth orientation difference of MgO grown by ALG is rationalized in terms of the surface diffusion coefficients on MgO.

Bibliography

Huang, R., & Kitai, A. H. (1992). Temperature-dependence of the growth orientation of atomic layer growth MgO. Applied Physics Letters, 61(12), 1450â1452.

Authors 2

Ron Huang (first)
Adrian H. Kitai (additional)

References 22 Referenced 73

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:59 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 11:32 p.m.)
Indexed	1 month, 3 weeks ago (July 7, 2025, 9:06 a.m.)
Issued	32 years, 11 months ago (Sept. 21, 1992)
Published	32 years, 11 months ago (Sept. 21, 1992)
Published Print	32 years, 11 months ago (Sept. 21, 1992)

Funders 0

None

BibTeX

@article{Huang_1992, title={Temperature-dependence of the growth orientation of atomic layer growth MgO}, volume={61}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.107514}, DOI={10.1063/1.107514}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Huang, Ron and Kitai, Adrian H.}, year={1992}, month=sep, pages={1450–1452} }

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