DOI: 10.1063/1.107484. Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

10.1063/1.107484

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

In this letter we report the first switched atomic layer epitaxy (SALE) of single crystal GaN over basal plane sapphire substrates. A low pressure metalorganic chemical vapor deposition (LPMOCVD) system was used for the epilayer depositions. In contrast to conventional LPMOCVD requiring temperatures higher than 700 °C, the SALE process resulted in single crystal insulating GaN layers at growth temperatures ranging from 900 to 450 °C. The band-edge transmission and the photoluminescence of the films from the SALE process were comparable to the best LPMOCVD films. To the best of our knowledge this is the first report of insulating GaN films which show excellent band-edge photoluminescence.

Bibliography

Asif Khan, M., Skogman, R. A., Van Hove, J. M., Olson, D. T., & Kuznia, J. N. (1992). Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition. Applied Physics Letters, 60(11), 1366â1368.

Authors 5

M. Asif Khan (first)
R. A. Skogman (additional)
J. M. Van Hove (additional)
D. T. Olson (additional)
J. N. Kuznia (additional)

References 9 Referenced 87

10.1063/1.104575 / Appl. Phys. Lett. (1991)
10.1143/JJAP.29.L205 / Jpn. J. Appl. Phys. (1990)
10.1016/S0022-3697(73)80090-3 / J. Phys. Chem. Solids (1973)
10.1063/1.329998 / J. Appl. Phys. (1982)
10.1063/1.105239 / Appl. Phys. Lett. (1991)
10.1063/1.104886 / Appl. Phys. Lett. (1991)
10.1063/1.105163 / Appl. Phys. Lett. (1991)
10.1063/1.96401 / Appl. Phys. Lett. (1985)
10.1063/1.98625 / Appl. Phys. Lett. (1987)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:49 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 10:45 p.m.)
Indexed	4 months, 4 weeks ago (April 1, 2025, 9:23 a.m.)
Issued	33 years, 5 months ago (March 16, 1992)
Published	33 years, 5 months ago (March 16, 1992)
Published Print	33 years, 5 months ago (March 16, 1992)

Funders 0

None

BibTeX

@article{Asif_Khan_1992, title={Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition}, volume={60}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.107484}, DOI={10.1063/1.107484}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Asif Khan, M. and Skogman, R. A. and Van Hove, J. M. and Olson, D. T. and Kuznia, J. N.}, year={1992}, month=mar, pages={1366–1368} }

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