Abstract
Arsenic dimers and multilayers are shown to exist on (001)GaAs surfaces under atmospheric pressure (AP) organometallic chemical vapor deposition (OMCVD) conditions. We obtained reflectance-difference spectra from surfaces in AP H2 that are equivalent to those obtained from the (2×4) and disordered-c(4×4) reconstructions prepared in ultrahigh vacuum by molecular beam epitaxy. Implications for models of OMCVD growth.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:33 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 2, 2024, 10:44 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 6, 2024, 9:23 p.m.) |
Issued | 33 years, 5 months ago (March 9, 1992) |
Published | 33 years, 5 months ago (March 9, 1992) |
Published Print | 33 years, 5 months ago (March 9, 1992) |
@article{Kamiya_1992, title={Arsenic dimers and multilayers on (001)GaAs surfaces in atmospheric pressure organometallic chemical vapor deposition}, volume={60}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.107417}, DOI={10.1063/1.107417}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kamiya, Itaru and Tanaka, H. and Aspnes, D. E. and Florez, L. T. and Colas, E. and Harbison, J. P. and Bhat, R.}, year={1992}, month=mar, pages={1238–1240} }