DOI: 10.1063/1.107330. Structure of the stepped Si/SiO2 interface after thermal oxidation: Investigations with scanning tunneling microscopy and spot-profile analysis of low-energy electron diffraction

Structure of the stepped Si/SiO2 interface after thermal oxidation: Investigations with scanning tunneling microscopy and spot-profile analysis of low-energy electron diffraction

10.1063/1.107330

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

After wet chemical oxide removal and fast transfer into ultrahigh vacuum the Si(111)/SiO2 interface structure of wafers from semiconductor-industrial processes (polishing, oxidation, annealing) is investigated with scanning tunneling microscopy (STM): Regular terrace arrays with atomic step height are visible with STM after technological ex situ preparation. The local step structure varies, kinks at step edges occur, and irregular islands are formed with increasing oxide thickness and oxidation rate. The local STM information is compared to macroscopically averaged results provided by electron diffraction (spot-profile analysis of low-energy electron diffraction).

Bibliography

Pietsch, G. J., KÃ¶hler, U., Jusko, O., Henzler, M., & Hahn, P. O. (1992). Structure of the stepped Si/SiO2 interface after thermal oxidation: Investigations with scanning tunneling microscopy and spot-profile analysis of low-energy electron diffraction. Applied Physics Letters, 60(11), 1321â1323.

Authors 5

G. J. Pietsch (first)
U. Köhler (additional)
O. Jusko (additional)
M. Henzler (additional)
P. O. Hahn (additional)

References 12 Referenced 22

10.1116/1.575980 / J. Vac. Sci. Technol. A (1989)
10.1103/PhysRevLett.57.249 / Phys. Rev. Lett. (1986)
10.1063/1.341489 / J. Appl. Phys. (1988)
{'key': '2024020303480207700_r4', 'first-page': '562', 'volume': '55', 'year': '1989', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1989)
{'key': '2024020303480207700_r5', 'first-page': '73', 'volume': '39', 'year': '1989', 'journal-title': 'Appl. Phys. A'} / Appl. Phys. A (1989)
{'key': '2024020303480207700_r6'}
10.1063/1.102728 / Appl. Phys. Lett. (1990)
10.1016/0039-6028(91)91178-Z / Surf. Sci. (1991)
10.1016/0039-6028(86)90321-3 / Surf. Sci. (1986)
10.1116/1.573601 / J. Vac. Sci. Technol. A (1986)
10.1016/0169-4332(90)90027-W / Appl. Surf. Sci. (1990)
{'key': '2024020303480207700_r12', 'first-page': '5572', 'volume': '39', 'year': '1989', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1989)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:33 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 10:48 p.m.)
Indexed	4 months, 1 week ago (April 20, 2025, 12:29 a.m.)
Issued	33 years, 5 months ago (March 16, 1992)
Published	33 years, 5 months ago (March 16, 1992)
Published Print	33 years, 5 months ago (March 16, 1992)

Funders 0

None

BibTeX

@article{Pietsch_1992, title={Structure of the stepped Si/SiO2 interface after thermal oxidation: Investigations with scanning tunneling microscopy and spot-profile analysis of low-energy electron diffraction}, volume={60}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.107330}, DOI={10.1063/1.107330}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Pietsch, G. J. and Köhler, U. and Jusko, O. and Henzler, M. and Hahn, P. O.}, year={1992}, month=mar, pages={1321–1323} }

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