DOI: 10.1063/1.107325. Initial stages of native oxide growth on hydrogen passivated Si(111) surfaces studied by scanning tunneling microscopy

Initial stages of native oxide growth on hydrogen passivated Si(111) surfaces studied by scanning tunneling microscopy

10.1063/1.107325

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We show by scanning tunneling microscopy (STM) imaging that native oxide growth in moist air on hydrogen terminated Si(111) 1×1 surfaces begins by continuing formation of small oxide nuclei, 10–20 Å in diameter, in the topmost Si layer. Their statistical distribution on the flat terraces points to a homogeneous nucleation process. Oxidation is extremely slow; after about 800 h only one complete monolayer is oxidized. In addition, a small number of three-dimensional oxide nuclei, several layers deep and 50–100 Å in width, are formed at step edges as a minority species, which may be related to surface defects or contaminations.

Bibliography

Neuwald, U., Hessel, H. E., Feltz, A., Memmert, U., & Behm, R. J. (1992). Initial stages of native oxide growth on hydrogen passivated Si(111) surfaces studied by scanning tunneling microscopy. Applied Physics Letters, 60(11), 1307â1309.

Authors 5

U. Neuwald (first)
H. E. Hessel (additional)
A. Feltz (additional)
U. Memmert (additional)
R. J. Behm (additional)

References 14 Referenced 78

10.1063/1.347181 / J. Appl. Phys. (1990)
10.1063/1.102435 / Appl. Phys. Lett. (1989)
10.1016/0039-6028(83)90388-6 / Surf. Sci. (1983)
10.1116/1.575845 / J. Vac. Sci. Technol. A (1989)
10.1063/1.347056 / J. Appl. Phys. (1990)
10.1143/JJAP.29.L2392 / Jpn. J. Appl. Phys. (1990)
10.1063/1.102728 / Appl. Phys. Lett. (1990)
10.1021/ja00006a079 / J. Am. Chem. Soc. (1991)
10.1103/PhysRevLett.65.1917 / Phys. Rev. Lett. (1990)
10.1063/1.105155 / Appl. Phys. Lett. (1991)
10.1016/S0009-2614(91)85140-R / Chem. Phys. Lett. (1991)
{'key': '2024020303443820300_r12'}
{'key': '2024020303443820300_r13'}
10.1063/1.347531 / J. Appl. Phys. (1991)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:36 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 10:44 p.m.)
Indexed	3 months ago (May 27, 2025, 10:58 a.m.)
Issued	33 years, 5 months ago (March 16, 1992)
Published	33 years, 5 months ago (March 16, 1992)
Published Print	33 years, 5 months ago (March 16, 1992)

Funders 0

None

BibTeX

@article{Neuwald_1992, title={Initial stages of native oxide growth on hydrogen passivated Si(111) surfaces studied by scanning tunneling microscopy}, volume={60}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.107325}, DOI={10.1063/1.107325}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Neuwald, U. and Hessel, H. E. and Feltz, A. and Memmert, U. and Behm, R. J.}, year={1992}, month=mar, pages={1307–1309} }

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