Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

High purity (less than 1% carbon) thin films of rhodium and iridium metal have been obtained by laser-assisted organometallic chemical vapor deposition. Gaseous (η5-C5H5)M(C2H4)2 (M=Rh,Ir) was the organometallic precursor. Depositions were carried out in an atmosphere of He and H2 at room temperature and atmospheric pressure. Wavelength dependence studies of the rhodium precursor have shown that only irradiation into the compound’s charge transfer band causes deposition. Deposits can also be obtained thermally. The films were analyzed by x-ray diffraction and x-ray photoelectron spectroscopy.

Bibliography

Cohan, J. S., Yuan, H., Williams, R. S., & Zink, J. I. (1992). Laser-assisted organometallic chemical vapor deposition of films of rhodium and iridium. Applied Physics Letters, 60(11), 1402–1403.

Authors 4
  1. Judson S. Cohan (first)
  2. Haojie Yuan (additional)
  3. R. Stanley Williams (additional)
  4. Jeffrey I. Zink (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:33 a.m.)
Deposited 1 year, 6 months ago (Feb. 2, 2024, 10:47 p.m.)
Indexed 1 year, 6 months ago (Feb. 6, 2024, 5:44 a.m.)
Issued 33 years, 5 months ago (March 16, 1992)
Published 33 years, 5 months ago (March 16, 1992)
Published Print 33 years, 5 months ago (March 16, 1992)
Funders 0

None

@article{Cohan_1992, title={Laser-assisted organometallic chemical vapor deposition of films of rhodium and iridium}, volume={60}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.107304}, DOI={10.1063/1.107304}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Cohan, Judson S. and Yuan, Haojie and Williams, R. Stanley and Zink, Jeffrey I.}, year={1992}, month=mar, pages={1402–1403} }