DOI: 10.1063/1.107179. Localized fabrication of Si nanostructures by focused ion beam implantation

Localized fabrication of Si nanostructures by focused ion beam implantation

10.1063/1.107179

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Si nanostructures have been fabricated by focused ion beam implantation (FIB) followed by etching in KOH/IPA. The FIB implantation into Si at a sufficiently high dose (≥1015/cm2) renders the local Si region much less susceptible to chemical etching. This effect has been observed for FIB implantation with Ga, Au, and Si ions. After etching, the implanted layer forms a cantilever structure whose thickness is a function of the implantation energy. At low energies (&lt;30 keV) nanometer-scale Si structures can be formed using this technique.

Bibliography

Steckl, A. J., Mogul, H. C., & Mogren, S. (1992). Localized fabrication of Si nanostructures by focused ion beam implantation. Applied Physics Letters, 60(15), 1833â1835.

Authors 3

A. J. Steckl (first)
H. C. Mogul (additional)
S. Mogren (additional)

References 11 Referenced 45

10.1143/JJAP.27.L2207 / Jpn. J. Appl. Phys. (1988)
10.1063/1.103561 / Appl. Phys. Lett. (1990)
10.1116/1.584291 / J. Vac. Sci. Technol. B (1988)
10.1116/1.584878 / J. Vac. Sci. Technol. B (1990)
{'key': '2024020303512185600_r5', 'first-page': '1059', 'volume': '1', 'year': '1983', 'journal-title': 'J. Vac. Sci. Technol, B'} / J. Vac. Sci. Technol, B (1983)
{'key': '2024020303512185600_r6', 'first-page': '1185', 'volume': 'ED-25', 'year': '1978', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1978)
{'key': '2024020303512185600_r7', 'first-page': '1178', 'volume': 'ED-25', 'year': '1978', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1978)
10.1109/PROC.1982.12331 / Proc. IEEE (1982)
10.1116/1.585679 / J. Vac. Sci. Technol. B (1991)
{'key': '2024020303512185600_r10'}
10.1149/1.2124367 / J. Electrochem. Soc. (1982)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:49 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 10:51 p.m.)
Indexed	1 year, 4 months ago (April 1, 2024, 1:09 p.m.)
Issued	33 years, 4 months ago (April 13, 1992)
Published	33 years, 4 months ago (April 13, 1992)
Published Print	33 years, 4 months ago (April 13, 1992)

Funders 0

None

BibTeX

@article{Steckl_1992, title={Localized fabrication of Si nanostructures by focused ion beam implantation}, volume={60}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.107179}, DOI={10.1063/1.107179}, number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Steckl, A. J. and Mogul, H. C. and Mogren, S.}, year={1992}, month=apr, pages={1833–1835} }

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