DOI: 10.1063/1.107162. Photoluminescence and formation mechanism of chemically etched silicon

Photoluminescence and formation mechanism of chemically etched silicon

10.1063/1.107162

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Room-temperature photoluminescence (PL) from Si chemically etched (CE) in HF-HNO3-based solution has been observed. Scanning electron microscopy reveals that the etched Si has a surface morphology similar to that of luminescent porous Si fabricated by conventional anodization. PL spectra show an order of magnitude smaller luminescent intensity and a shorter wavelength intensity peak for CE Si. A CE Si thickness limitation was observed. The formation of CE Si can be readily explained by a local anodization model.

Bibliography

Shih, S., Jung, K. H., Hsieh, T. Y., Sarathy, J., Campbell, J. C., & Kwong, D. L. (1992). Photoluminescence and formation mechanism of chemically etched silicon. Applied Physics Letters, 60(15), 1863â1865.

Authors 6

S. Shih (first)
K. H. Jung (additional)
T. Y. Hsieh (additional)
J. Sarathy (additional)
J. C. Campbell (additional)
D. L. Kwong (additional)

References 17 Referenced 105

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10.1063/1.105869 / Appl. Phys. Lett. (1991)
{'key': '2024020303520336700_r3', 'first-page': '920', 'volume': '117B&118B', 'year': '1983', 'journal-title': 'Physica'} / Physica (1983)
{'key': '2024020303520336700_r4'}
10.1063/1.107242 / Appl. Phys. Lett. (1992)
10.1016/0022-0248(78)90467-0 / J. Crystal Growth (1978)
10.1515/zpch-1950-1941-628 / Z. Physik. Chem. (1950)
{'key': '2024020303520336700_r8', 'first-page': '1183', 'volume': '63', 'year': '1959', 'journal-title': 'Z. Elektrochem.'} / Z. Elektrochem. (1959)
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10.1149/1.2428906 / J. Electrochem. Soc. (1958)
{'key': '2024020303520336700_r16', 'first-page': '55', 'volume': '132', 'year': '1928', 'journal-title': 'Z. Physik. Chem.'} / Z. Physik. Chem. (1928)
10.1063/1.105250 / Appl. Phys. Lett. (1991)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:33 a.m.)
Deposited	8 months, 3 weeks ago (Dec. 7, 2024, 4:33 p.m.)
Indexed	3 weeks ago (Aug. 7, 2025, 4:30 p.m.)
Issued	33 years, 4 months ago (April 13, 1992)
Published	33 years, 4 months ago (April 13, 1992)
Published Print	33 years, 4 months ago (April 13, 1992)

Funders 0

None

BibTeX

@article{Shih_1992, title={Photoluminescence and formation mechanism of chemically etched silicon}, volume={60}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.107162}, DOI={10.1063/1.107162}, number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Shih, S. and Jung, K. H. and Hsieh, T. Y. and Sarathy, J. and Campbell, J. C. and Kwong, D. L.}, year={1992}, month=apr, pages={1863–1865} }

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