Abstract
We demonstrate the first GaAs/AlGaAs multiquantum well infrared detector device with double wavelength selectivity and high wavelength resolution. By applying an efficient light coupling mechanism, which is based upon the excitation and emission of surface plasmons, we have achieved a responsivity R of 2.20 A/W and a detectivity D* of 2.2×1011 cm √Hz/W for λ=7.38 μm at a temperature T=5 K for a 300 K background irradiance and a 90° field of view, which are one of the highest values reported to date.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:49 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 2, 2024, 10:53 p.m.) |
Indexed | 2 months, 3 weeks ago (June 4, 2025, 12:31 p.m.) |
Issued | 33 years, 4 months ago (April 20, 1992) |
Published | 33 years, 4 months ago (April 20, 1992) |
Published Print | 33 years, 4 months ago (April 20, 1992) |
@article{K_ck_1992, title={Double wavelength selective GaAs/AlGaAs infrared detector device}, volume={60}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.107127}, DOI={10.1063/1.107127}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Köck, A. and Gornik, E. and Abstreiter, G. and Böhm, G. and Walther, M. and Weimann, G.}, year={1992}, month=apr, pages={2011–2013} }