Abstract
Laser diode operation has been obtained from (Zn,Cd)Se/ZnSe and (Zn,Cd)Se/Zn(S,Se) quantum well structures in the blue and the green. The devices, prepared on p- and n-type (In,Ga)As or GaAs buffer layers for lattice matching purposes to control the defect density, have been operated at near-room-temperature conditions and briefly at room temperature with uncoated end facets. Quasi-continuous wave operation has been obtained at T=77 K.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:36 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 2, 2024, 10:55 p.m.) |
Indexed | 4 months, 2 weeks ago (April 16, 2025, 1:04 p.m.) |
Issued | 33 years, 4 months ago (April 27, 1992) |
Published | 33 years, 4 months ago (April 27, 1992) |
Published Print | 33 years, 4 months ago (April 27, 1992) |
@article{Jeon_1992, title={Blue and green diode lasers in ZnSe-based quantum wells}, volume={60}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.107109}, DOI={10.1063/1.107109}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Jeon, H. and Ding, J. and Nurmikko, A. V. and Xie, W. and Grillo, D. C. and Kobayashi, M. and Gunshor, R. L. and Hua, G. C. and Otsuka, N.}, year={1992}, month=apr, pages={2045–2047} }