DOI: 10.1063/1.106962. Low pressure chemical vapor deposition of oxide from SiH4/O2: Chemistry and effects on electrical properties

Low pressure chemical vapor deposition of oxide from SiH4/O2: Chemistry and effects on electrical properties

10.1063/1.106962

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The low pressure chemical vapor deposition (CVD) process of SiO2 from SiH4 and O2 has been analyzed. For deposition at pressures ranging from 10−3 to 3 Torr, with no carrier gas, the process is dominated by fast gas-phase reactions. In situ analytical techniques, such as mass spectrometry and high-resolution electron energy loss spectroscopy, indicate that hydroxyl groups are reaction products and are imbedded into the growing oxide at temperatures from 300 to 600 °C. Presence of these groups is detrimental to the electrical properties of metal-oxide-semiconductor (MOS) structures, e.g., by causing low-field breakdown and by increasing the interface state density. Low-pressure (SiH4/O2) oxides are thus principally not well suited for gate-oxide applications because of their underlying chemistry.

Bibliography

Liehr, M., & Cohen, S. A. (1992). Low pressure chemical vapor deposition of oxide from SiH4/O2: Chemistry and effects on electrical properties. Applied Physics Letters, 60(2), 198â200.

Authors 2

M. Liehr (first)
S. A. Cohen (additional)

References 15 Referenced 32

10.1116/1.569340 / J. Vac. Sci. Technol. (1977)
10.1116/1.576786 / J. Vac. Sci. Technol. A (1990)
{'key': '2024020303294675900_r3', 'first-page': '187', 'volume': '31', 'year': '1970', 'journal-title': 'RCA Rev.'} / RCA Rev. (1970)
10.1116/1.576613 / J. Vac. Sci. Technol. A (1990)
10.1063/1.102719 / Appl. Phys. Lett. (1990)
10.1016/0009-2614(89)80009-0 / Chem. Phys. Lett. (1989)
10.1149/1.2129379 / J. Electrochem. Soc. (1980)
10.1016/0022-0248(84)90273-2 / J. Cryst. Growth (1984)
{'key': '2024020303294675900_r9', 'first-page': '1182', 'volume': 'I', 'year': '1935', 'journal-title': 'J. Chem. Soc.'} / J. Chem. Soc. (1935)
10.1016/0040-6090(83)90052-4 / Thin Solid Films (1983)
10.1063/1.328657 / J. Appl. Phys. (1981)
{'key': '2024020303294675900_r12', 'first-page': '411', 'volume': '50', 'year': '1989', 'journal-title': 'J. de Physique'} / J. de Physique (1989)
10.1116/1.583944 / J. Vac. Sci. Technol. B (1987)
10.1116/1.573832 / J. Vac. Sci. Technol. A (1986)
{'key': '2024020303294675900_r15', 'first-page': '576', 'volume': '7', 'year': '1989', 'journal-title': 'J. Vac. Sci. Technol. A'} / J. Vac. Sci. Technol. A (1989)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:33 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 10:29 p.m.)
Indexed	2 months, 2 weeks ago (June 16, 2025, 8:07 a.m.)
Issued	33 years, 7 months ago (Jan. 13, 1992)
Published	33 years, 7 months ago (Jan. 13, 1992)
Published Print	33 years, 7 months ago (Jan. 13, 1992)

Funders 0

None

BibTeX

@article{Liehr_1992, title={Low pressure chemical vapor deposition of oxide from SiH4/O2: Chemistry and effects on electrical properties}, volume={60}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.106962}, DOI={10.1063/1.106962}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Liehr, M. and Cohen, S. A.}, year={1992}, month=jan, pages={198–200} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        6,
        16
      ]
    ],
    "date-time": "2025-06-16T12:07:44Z",
    "timestamp": 1750075664415
  },
  "reference-count": 15,
  "publisher": "AIP Publishing",
  "issue": "2",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1992,
        1,
        13
      ]
    ]
  },
  "abstract": "<jats:p>The low pressure chemical vapor deposition (CVD) process of SiO2 from SiH4 and O2 has been analyzed. For deposition at pressures ranging from 10\u22123 to 3 Torr, with no carrier gas, the process is dominated by fast gas-phase reactions. In\u2008situ analytical techniques, such as mass spectrometry and high-resolution electron energy loss spectroscopy, indicate that hydroxyl groups are reaction products and are imbedded into the growing oxide at temperatures from 300 to 600\u2009\u00b0C. Presence of these groups is detrimental to the electrical properties of metal-oxide-semiconductor (MOS) structures, e.g., by causing low-field breakdown and by increasing the interface state density. Low-pressure (SiH4/O2) oxides are thus principally not well suited for gate-oxide applications because of their underlying chemistry.</jats:p>",
  "DOI": "10.1063/1.106962",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:33:50Z",
    "timestamp": 1027690430000
  },
  "page": "198-200",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 32,
  "title": "Low pressure chemical vapor deposition of oxide from SiH4/O2: Chemistry and effects on electrical properties",
  "prefix": "10.1063",
  "volume": "60",
  "author": [
    {
      "given": "M.",
      "family": "Liehr",
      "sequence": "first",
      "affiliation": [
        {
          "name": "IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598"
        }
      ]
    },
    {
      "given": "S. A.",
      "family": "Cohen",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020303294675900_r1",
      "doi-asserted-by": "crossref",
      "first-page": "1082",
      "DOI": "10.1116/1.569340",
      "volume": "14",
      "year": "1977",
      "journal-title": "J. Vac. Sci. Technol."
    },
    {
      "key": "2024020303294675900_r2",
      "doi-asserted-by": "crossref",
      "first-page": "1939",
      "DOI": "10.1116/1.576786",
      "volume": "8",
      "year": "1990",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020303294675900_r3",
      "first-page": "187",
      "volume": "31",
      "year": "1970",
      "journal-title": "RCA Rev."
    },
    {
      "key": "2024020303294675900_r4",
      "doi-asserted-by": "crossref",
      "first-page": "2960",
      "DOI": "10.1116/1.576613",
      "volume": "8",
      "year": "1990",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020303294675900_r5",
      "doi-asserted-by": "crossref",
      "first-page": "629",
      "DOI": "10.1063/1.102719",
      "volume": "56",
      "year": "1990",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020303294675900_r6",
      "doi-asserted-by": "crossref",
      "first-page": "48",
      "DOI": "10.1016/0009-2614(89)80009-0",
      "volume": "163",
      "year": "1989",
      "journal-title": "Chem. Phys. Lett."
    },
    {
      "key": "2024020303294675900_r7",
      "doi-asserted-by": "crossref",
      "first-page": "2222",
      "DOI": "10.1149/1.2129379",
      "volume": "127",
      "year": "1980",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020303294675900_r8",
      "doi-asserted-by": "crossref",
      "first-page": "271",
      "DOI": "10.1016/0022-0248(84)90273-2",
      "volume": "70",
      "year": "1984",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020303294675900_r9",
      "first-page": "1182",
      "volume": "I",
      "year": "1935",
      "journal-title": "J. Chem. Soc."
    },
    {
      "key": "2024020303294675900_r10",
      "doi-asserted-by": "crossref",
      "first-page": "361",
      "DOI": "10.1016/0040-6090(83)90052-4",
      "volume": "102",
      "year": "1983",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2024020303294675900_r11",
      "doi-asserted-by": "crossref",
      "first-page": "6651",
      "DOI": "10.1063/1.328657",
      "volume": "52",
      "year": "1981",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020303294675900_r12",
      "first-page": "411",
      "volume": "50",
      "year": "1989",
      "journal-title": "J. de Physique"
    },
    {
      "key": "2024020303294675900_r13",
      "doi-asserted-by": "crossref",
      "first-page": "530",
      "DOI": "10.1116/1.583944",
      "volume": "5",
      "year": "1987",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024020303294675900_r14",
      "doi-asserted-by": "crossref",
      "first-page": "681",
      "DOI": "10.1116/1.573832",
      "volume": "4",
      "year": "1986",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020303294675900_r15",
      "first-page": "576",
      "volume": "7",
      "year": "1989",
      "journal-title": "J. Vac. Sci. Technol. A"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/60/2/198/18486884/198_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/60/2/198/18486884/198_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T03:29:56Z",
    "timestamp": 1706930996000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/60/2/198/60080/Low-pressure-chemical-vapor-deposition-of-oxide"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1992,
        1,
        13
      ]
    ]
  },
  "references-count": 15,
  "journal-issue": {
    "issue": "2",
    "published-print": {
      "date-parts": [
        [
          1992,
          1,
          13
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.106962",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1992,
        1,
        13
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1992,
        1,
        13
      ]
    ]
  }
}