Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

A tunable pulsed UV laser has been used to investigate photoemission from epitaxial films on Si(111). We find that internal photoemission from the Si surface provides significant electron emission through overlayers as thick as 8000 Å. The attenuation length in the epitaxial CaF2 films is found to be 2600 Å.

Bibliography

Quiniou, B., Schwarz, W., Wu, Z., Osgood, R. M., Yang, Q., & Phillips, J. M. (1992). Photoemission from thick overlying epitaxial layers of CaF2 on Si(111). Applied Physics Letters, 60(2), 183–185.

Authors 6
  1. B. Quiniou (first)
  2. W. Schwarz (additional)
  3. Z. Wu (additional)
  4. R. M. Osgood (additional)
  5. Q. Yang (additional)
  6. Julia M. Phillips (additional)
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Dates
Type When
Created 23 years ago (July 26, 2002, 9:33 a.m.)
Deposited 1 year, 6 months ago (Feb. 2, 2024, 10:28 p.m.)
Indexed 1 month, 1 week ago (July 16, 2025, 8:15 a.m.)
Issued 33 years, 7 months ago (Jan. 13, 1992)
Published 33 years, 7 months ago (Jan. 13, 1992)
Published Print 33 years, 7 months ago (Jan. 13, 1992)
Funders 0

None

@article{Quiniou_1992, title={Photoemission from thick overlying epitaxial layers of CaF2 on Si(111)}, volume={60}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.106957}, DOI={10.1063/1.106957}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Quiniou, B. and Schwarz, W. and Wu, Z. and Osgood, R. M. and Yang, Q. and Phillips, Julia M.}, year={1992}, month=jan, pages={183–185} }