Crossref
journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract
A tunable pulsed UV laser has been used to investigate photoemission from epitaxial films on Si(111). We find that internal photoemission from the Si surface provides significant electron emission through overlayers as thick as 8000 Å. The attenuation length in the epitaxial CaF2 films is found to be 2600 Å.
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Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 9:33 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 2, 2024, 10:28 p.m.) |
Indexed | 1 month, 1 week ago (July 16, 2025, 8:15 a.m.) |
Issued | 33 years, 7 months ago (Jan. 13, 1992) |
Published | 33 years, 7 months ago (Jan. 13, 1992) |
Published Print | 33 years, 7 months ago (Jan. 13, 1992) |
@article{Quiniou_1992, title={Photoemission from thick overlying epitaxial layers of CaF2 on Si(111)}, volume={60}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.106957}, DOI={10.1063/1.106957}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Quiniou, B. and Schwarz, W. and Wu, Z. and Osgood, R. M. and Yang, Q. and Phillips, Julia M.}, year={1992}, month=jan, pages={183–185} }