DOI: 10.1063/1.106906. Luminescence quenching and the formation of the GaP1−<i>x</i>N<i>x</i> alloy in GaP with increasing nitrogen content

Luminescence quenching and the formation of the GaP1−xNx alloy in GaP with increasing nitrogen content

10.1063/1.106906

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A study of the luminescence properties of epitaxial GaP containing atomic N grown by molecular beam epitaxy using NH3 and PH3 as the column V sources was conducted. The 77 K photoluminescence spectra of the N-doped epitaxial GaP showed a continuous redshift, from 5691 Å (2.18 eV) to 6600 Å (1.88 eV), resulted when the N concentration exceeded ∼5–7×1019 cm−3. This energy shift was found to be consistent with energy gap predictions using the dielectric theory of electronegativity for the GaP1−xNx system. The data also indicate that the emission intensity was maximum for N∼1×1020 cm−3, and then monotonically decreases with increasing N content. This is consistent with the formation of an indirect band-gap semiconductor.

Bibliography

Baillargeon, J. N., Cheng, K. Y., Hofler, G. E., Pearah, P. J., & Hsieh, K. C. (1992). Luminescence quenching and the formation of the GaP1âxNx alloy in GaP with increasing nitrogen content. Applied Physics Letters, 60(20), 2540â2542.

Authors 5

J. N. Baillargeon (first)
K. Y. Cheng (additional)
G. E. Hofler (additional)
P. J. Pearah (additional)
K. C. Hsieh (additional)

References 11 Referenced 189

10.1103/PhysRevLett.15.857 / Phys. Rev. Lett. (1965)
10.1103/PhysRev.150.690 / Phys. Rev. (1966)
{'key': '2024020304002150000_r3', 'first-page': '552', 'volume': '12', 'year': '1970', 'journal-title': 'J. Lumin.'} / J. Lumin. (1970)
10.1063/1.1652543 / Appl. Phys. Lett. (1968)
10.1063/1.1653876 / Appl. Phys. Lett. (1971)
10.1088/0022-3719/4/16/007 / J. Phys. C (1971)
10.1109/PROC.1973.9175 / Proc. IEEE (1973)
{'key': '2024020304002150000_r8', 'first-page': '2123', 'volume': '68', 'year': '1990', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1990)
10.1063/1.347447 / J. Appl. Phys. (1991)
10.1103/PhysRev.182.891 / Phys. Rev. (1969)
{'key': '2024020304002150000_r11'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:33 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 11 p.m.)
Indexed	11 months, 2 weeks ago (Sept. 19, 2024, 10:52 a.m.)
Issued	33 years, 3 months ago (May 18, 1992)
Published	33 years, 3 months ago (May 18, 1992)
Published Print	33 years, 3 months ago (May 18, 1992)

Funders 0

None

BibTeX

@article{Baillargeon_1992, title={Luminescence quenching and the formation of the GaP1−xNx alloy in GaP with increasing nitrogen content}, volume={60}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.106906}, DOI={10.1063/1.106906}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Baillargeon, J. N. and Cheng, K. Y. and Hofler, G. E. and Pearah, P. J. and Hsieh, K. C.}, year={1992}, month=may, pages={2540–2542} }

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