Abstract
A p-n junction is formed for the first time in a cross-sectional area of a GaAs wire crystal with a diameter of about 100 nm. Ultrafine cylindrical growth by metalorganic vapor phase epitaxy is employed for the fabrication. Current-voltage and capacitance-voltage characteristics confirm the formation of the p-n junction in a narrow area at the midpoint of a wire crystal. Intensive light emission by current injection is observed at 77 K and even at room temperature. These results suggest that ultrafine optoelectronic devices with quantum-size p-n junction are possible.
References
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{'key': '2024020303362923100_r9'}
Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 9:34 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 2, 2024, 10:36 p.m.) |
Indexed | 2 months ago (June 14, 2025, 11:10 a.m.) |
Issued | 33 years, 6 months ago (Feb. 10, 1992) |
Published | 33 years, 6 months ago (Feb. 10, 1992) |
Published Print | 33 years, 6 months ago (Feb. 10, 1992) |
@article{Haraguchi_1992, title={GaAs p-n junction formed in quantum wire crystals}, volume={60}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.106556}, DOI={10.1063/1.106556}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Haraguchi, Keiichi and Katsuyama, Toshio and Hiruma, Kenji and Ogawa, Kensuke}, year={1992}, month=feb, pages={745–747} }