DOI: 10.1063/1.106503. Electronic structure of light-emitting porous Si

Electronic structure of light-emitting porous Si

10.1063/1.106503

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Characterization of light-emitting porous Si films with x-ray photoelectron spectroscopy is reported. Only traces of O are detected on HF-etched samples, in contradiction to an earlier report that oxides are a significant component of porous Si. Si 2p and valence-band measurements demonstrate that the near-surface region of high porosity films which exhibit visible luminescence consists of amorphous Si.

Bibliography

Vasquez, R. P., Fathauer, R. W., George, T., Ksendzov, A., & Lin, T. L. (1992). Electronic structure of light-emitting porous Si. Applied Physics Letters, 60(8), 1004â1006.

Authors 5

R. P. Vasquez (first)
R. W. Fathauer (additional)
T. George (additional)
A. Ksendzov (additional)
T. L. Lin (additional)

References 20 Referenced 180

10.1063/1.93298 / Appl. Phys. Lett. (1982)
10.1016/0022-0248(84)90111-8 / J. Cryst. Growth (1984)
10.1063/1.95733 / Appl. Phys. Lett. (1985)
10.1088/0022-3719/17/35/020 / J. Phys. C (1984)
10.1016/0040-6090(85)90408-0 / Thin Solid Films (1985)
10.1016/0039-6028(85)90520-5 / Surf. Sci. (1985)
10.1016/0167-5087(83)91025-6 / Nucl. Instrum. Methods (1983)
10.1016/0168-583X(85)90757-8 / Nucl. Instrum. Methods B (1985)
10.1063/1.103561 / Appl. Phys. Lett. (1990)
10.1016/0022-3697(60)90215-8 / J. Phys. Chem. Solids (1960)
10.1016/0022-0248(86)90082-5 / J. Cryst. Growth (1986)
{'key': '2024020303374420600_r12'}
10.1038/353335a0 / Nature (1991)
10.1016/0040-6090(89)90445-8 / Thin Solid Films (1989)
10.1063/1.335956 / J. Appl. Phys. (1985)
10.1103/PhysRevB.7.2644 / Phys. Rev. B (1973)
10.1103/PhysRevB.23.4156 / Phys. Rev. B (1981)
10.1016/0038-1098(81)90650-5 / Solid State Commun. (1981)
10.1080/13642818208246392 / Philos. Mag. B (1982)
10.1103/PhysRevB.23.3102 / Phys. Rev. B (1981)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:34 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 10:37 p.m.)
Indexed	1 year, 6 months ago (Feb. 19, 2024, 2:05 p.m.)
Issued	33 years, 6 months ago (Feb. 24, 1992)
Published	33 years, 6 months ago (Feb. 24, 1992)
Published Print	33 years, 6 months ago (Feb. 24, 1992)

Funders 0

None

BibTeX

@article{Vasquez_1992, title={Electronic structure of light-emitting porous Si}, volume={60}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.106503}, DOI={10.1063/1.106503}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Vasquez, R. P. and Fathauer, R. W. and George, T. and Ksendzov, A. and Lin, T. L.}, year={1992}, month=feb, pages={1004–1006} }

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