DOI: 10.1063/1.106290. A physical model for boron penetration through an oxynitride gate dielectric prepared by rapid thermal processing in N2O

A physical model for boron penetration through an oxynitride gate dielectric prepared by rapid thermal processing in N2O

10.1063/1.106290

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

In this paper a physical model is presented for boron penetration through an oxynitride gate dielectric prepared by rapid thermal processing in a nitrous oxide (N2O) ambient. Compared with a conventional rapid thermally grown oxide, oxynitride dielectrics show excellent diffusion barrier properties to the dopant (BF2). The Auger electron spectroscopy nitrogen depth profile shows nitrogen pileup at the Si/SiO2 interface, which may explain the lower segregation coefficient (≊20 times lower) of the oxynitride dielectric, as expected from suprem-iii simulation with modified diffusivity values.

Bibliography

Hwang, H., Ting, W., Kwong, D.-L., & Lee, J. (1991). A physical model for boron penetration through an oxynitride gate dielectric prepared by rapid thermal processing in N2O. Applied Physics Letters, 59(13), 1581â1582.

Authors 4

Hyunsang Hwang (first)
Wenchi Ting (additional)
Dim-Lee Kwong (additional)
Jack Lee (additional)

References 6 Referenced 17

{'key': '2024020302561090500_r1', 'first-page': '1842', 'volume': 'ED-37', 'year': '1990', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1990)
{'key': '2024020302561090500_r2', 'first-page': '443', 'volume': '1989', 'year': '1989', 'journal-title': 'IEDM Tech. Dig.'} / IEDM Tech. Dig. (1989)
{'key': '2024020302561090500_r3', 'first-page': '447', 'volume': '1989', 'year': '1989', 'journal-title': 'IEDM Tech. Dig.'} / IEDM Tech. Dig. (1989)
10.1063/1.103550 / Appl. Phys. Lett. (1990)
{'key': '2024020302561090500_r5', 'first-page': '421', 'volume': '1990', 'year': '1990', 'journal-title': 'IEDM Tech. Dig.'} / IEDM Tech. Dig. (1990)
{'key': '2024020302561090500_r6', 'first-page': '247', 'volume': 'EDL-6', 'year': '1990', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1990)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:31 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 9:56 p.m.)
Indexed	1 year, 6 months ago (Feb. 11, 2024, 9:21 a.m.)
Issued	33 years, 11 months ago (Sept. 23, 1991)
Published	33 years, 11 months ago (Sept. 23, 1991)
Published Print	33 years, 11 months ago (Sept. 23, 1991)

Funders 0

None

BibTeX

@article{Hwang_1991, title={A physical model for boron penetration through an oxynitride gate dielectric prepared by rapid thermal processing in N2O}, volume={59}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.106290}, DOI={10.1063/1.106290}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hwang, Hyunsang and Ting, Wenchi and Kwong, Dim-Lee and Lee, Jack}, year={1991}, month=sep, pages={1581–1582} }

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