DOI: 10.1063/1.106042. Ultraviolet radiation induced defect creation in buried SiO2 layers

Ultraviolet radiation induced defect creation in buried SiO2 layers

10.1063/1.106042

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The creation of oxygen-vacancy defects in amorphous SiO2 films produced by O+ implantation and annealing has been studied using radiation from a microwave excited Kr plasma. Photons having λ≤125 nm are found to create saturation densities ∼1.3×1019 cm−3 whereas for λ≥ (R18)200 nm the saturation density is ∼3.4×1017 cm−3. It is argued that simultaneous defect creation and annihilation may occur for long wavelength, sub-band-gap energy photons. Strongly enhanced defect creation (≤970 times) is observed as compared to bulk, amorphous SiO2 in the form of Suprasil 1 plate. It is suggested that this may be due to H sensitization of the defect precursors (O3≡Si—Si≡O3).

Bibliography

Devine, R. A. B., Leray, J.-L., & Margail, J. (1991). Ultraviolet radiation induced defect creation in buried SiO2 layers. Applied Physics Letters, 59(18), 2275â2277.

Authors 3

R. A. B. Devine (first)
J-L. Leray (additional)
J. Margail (additional)

References 13 Referenced 50

{'key': '2024020303060711600_r1'}
10.1557/PROC-53-193 / Proc. Mat. Res. Soc. Symp. (1985)
{'key': '2024020303060711600_r3'}
10.1063/1.332937 / J. Appl. Phys. (1984)
10.1063/1.103905 / Appl. Phys. Lett. (1990)
10.1103/PhysRevB.19.4292 / Phys. Rev. B (1979)
{'key': '2024020303060711600_r7', 'first-page': '1', 'volume': '4', 'year': '1986', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B (1986)
10.1143/JJAP.28.2172 / Jpn. J. Appl. Phys. (1989)
10.1103/PhysRevB.41.12882 / Phys. Rev. B (1990)
10.1103/PhysRevB.38.2140 / Phys. Rev. B (1988)
10.1109/23.101222 / IEEE Trans. Nucl. Sci. NS (1990)
10.1063/1.344554 / J. Appl. Phys. (1990)
10.1088/0022-3719/17/7/008 / J. Phys. C (1984)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:31 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 10:06 p.m.)
Indexed	4 months, 3 weeks ago (April 13, 2025, 12:53 a.m.)
Issued	33 years, 10 months ago (Oct. 28, 1991)
Published	33 years, 10 months ago (Oct. 28, 1991)
Published Print	33 years, 10 months ago (Oct. 28, 1991)

Funders 0

None

BibTeX

@article{Devine_1991, title={Ultraviolet radiation induced defect creation in buried SiO2 layers}, volume={59}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.106042}, DOI={10.1063/1.106042}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Devine, R. A. B. and Leray, J-L. and Margail, J.}, year={1991}, month=oct, pages={2275–2277} }

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