Abstract
Ge microcrystals embedded in SiO2 glassy matrices were formed by a radio-frequency magnetron cosputtering technique and then annealed at 800 °C for 30 min. The average radius of the Ge microcrystals in SiO2 was determined to be about 3 nm by means of Raman spectroscopy and high resolution electron microscope. The annealed sample showed a strong room temperature luminescence with a peak at 2.18 eV. This is consistent with quantum confinement of electrons and holes.
References
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Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 9:33 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 2, 2024, 10:17 p.m.) |
Indexed | 2 weeks, 2 days ago (Aug. 7, 2025, 4:51 a.m.) |
Issued | 33 years, 8 months ago (Dec. 9, 1991) |
Published | 33 years, 8 months ago (Dec. 9, 1991) |
Published Print | 33 years, 8 months ago (Dec. 9, 1991) |
@article{Maeda_1991, title={Visible photoluminescence of Ge microcrystals embedded in SiO2 glassy matrices}, volume={59}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.105773}, DOI={10.1063/1.105773}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Maeda, Yoshihito and Tsukamoto, Nobuo and Yazawa, Yoshiaki and Kanemitsu, Yoshihiko and Masumoto, Yasuaki}, year={1991}, month=dec, pages={3168–3170} }