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AIP Publishing
Applied Physics Letters (317)
Abstract

Ge microcrystals embedded in SiO2 glassy matrices were formed by a radio-frequency magnetron cosputtering technique and then annealed at 800 °C for 30 min. The average radius of the Ge microcrystals in SiO2 was determined to be about 3 nm by means of Raman spectroscopy and high resolution electron microscope. The annealed sample showed a strong room temperature luminescence with a peak at 2.18 eV. This is consistent with quantum confinement of electrons and holes.

Bibliography

Maeda, Y., Tsukamoto, N., Yazawa, Y., Kanemitsu, Y., & Masumoto, Y. (1991). Visible photoluminescence of Ge microcrystals embedded in SiO2 glassy matrices. Applied Physics Letters, 59(24), 3168–3170.

Authors 5
  1. Yoshihito Maeda (first)
  2. Nobuo Tsukamoto (additional)
  3. Yoshiaki Yazawa (additional)
  4. Yoshihiko Kanemitsu (additional)
  5. Yasuaki Masumoto (additional)
References 14 Referenced 545
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Dates
Type When
Created 23 years ago (July 26, 2002, 9:33 a.m.)
Deposited 1 year, 6 months ago (Feb. 2, 2024, 10:17 p.m.)
Indexed 2 weeks, 2 days ago (Aug. 7, 2025, 4:51 a.m.)
Issued 33 years, 8 months ago (Dec. 9, 1991)
Published 33 years, 8 months ago (Dec. 9, 1991)
Published Print 33 years, 8 months ago (Dec. 9, 1991)
Funders 0

None

@article{Maeda_1991, title={Visible photoluminescence of Ge microcrystals embedded in SiO2 glassy matrices}, volume={59}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.105773}, DOI={10.1063/1.105773}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Maeda, Yoshihito and Tsukamoto, Nobuo and Yazawa, Yoshiaki and Kanemitsu, Yoshihiko and Masumoto, Yasuaki}, year={1991}, month=dec, pages={3168–3170} }