DOI: 10.1063/1.105342. Heteroepitaxy of carbon on copper by high-temperature ion implantation

Heteroepitaxy of carbon on copper by high-temperature ion implantation

10.1063/1.105342

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The recently reported carbon-ion-implantation-outdiffusion method [J. F. Prins and H. L. Gaigher, Mater. Res. Soc. Sym. Proc. (to be published, 1991)] of growing epitaxial diamond layers on copper was carefully examined. X-ray diffraction, Raman scattering, and transmission electron diffraction characterization of films prepared by implanting 200 keV carbon ions into (100), (110), (111), and (210) copper, held at temperatures of 850–1000 °C, showed that the films were invariably highly oriented crystalline graphite. No evidence has been found to support the claim that diamond was formed by this implantation-outdiffusion method.

Bibliography

Lee, S.-T., Chen, S., Braunstein, G., Feng, X., Bello, I., & Lau, W. M. (1991). Heteroepitaxy of carbon on copper by high-temperature ion implantation. Applied Physics Letters, 59(7), 785â787.

Authors 6

S.-Tong Lee (first)
Samuel Chen (additional)
G. Braunstein (additional)
X. Feng (additional)
I. Bello (additional)
W. M. Lau (additional)

References 14 Referenced 40

{'key': '2024020302450140900_r1', 'first-page': '1', 'volume': '162', 'year': '1990', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (1990)
{'key': '2024020302450140900_r2', 'first-page': '342', 'volume': 'EDL-8', 'year': '1987', 'journal-title': 'IEEE Eletron Device Lett.'} / IEEE Eletron Device Lett. (1987)
10.1063/1.103647 / Appl. Phys. Lett. (1990)
{'key': '2024020302450140900_r4'}
{'key': '2024020302450140900_r5'}
{'key': '2024020302450140900_r6'}
10.1063/1.102505 / Appl. Phys. Lett. (1990)
{'key': '2024020302450140900_r8', 'first-page': '1360', 'volume': '47', 'year': '1985', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1985)
{'key': '2024020302450140900_r9', 'first-page': '219', 'volume': '162', 'year': '1990', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (1990)
10.1063/1.99788 / Appl. Phys. Lett. (1988)
{'key': '2024020302450140900_r11'}
10.1038/192450a0 / Nature (1961)
10.1063/1.1708759 / J. Appl. Phys. (1966)
{'key': '2024020302450140900_r14'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:33 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 9:45 p.m.)
Indexed	11 months, 2 weeks ago (Sept. 13, 2024, 12:39 p.m.)
Issued	34 years ago (Aug. 12, 1991)
Published	34 years ago (Aug. 12, 1991)
Published Print	34 years ago (Aug. 12, 1991)

Funders 0

None

BibTeX

@article{Lee_1991, title={Heteroepitaxy of carbon on copper by high-temperature ion implantation}, volume={59}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.105342}, DOI={10.1063/1.105342}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lee, S.-Tong and Chen, Samuel and Braunstein, G. and Feng, X. and Bello, I. and Lau, W. M.}, year={1991}, month=aug, pages={785–787} }

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