DOI: 10.1063/1.105304. Direct observation of SiH3 on a 1%-HF-treated Si(111) surface by scanning tunneling microscopy

Direct observation of SiH3 on a 1%-HF-treated Si(111) surface by scanning tunneling microscopy

10.1063/1.105304

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Scanning tunneling microscopy (STM) has been made on an as-prepared Si(111) surface by the 1%-HF treatment. The STM images for both the empty and filled states exhibit regular dots with the threefold symmetry on the flat parts of the surface: the distance between dots measures 2.2 Å. The origin of these dots can be ascribed to the H atoms of the trihydride (SiH3) phase on the Si(111) surface. The electrons can tunnel from or to the tail states of the σ (filled) states or the σ* (empty) states around the H atoms for the SiH3 radicals, respectively.

Bibliography

Morita, Y., Miki, K., & Tokumoto, H. (1991). Direct observation of SiH3 on a 1%-HF-treated Si(111) surface by scanning tunneling microscopy. Applied Physics Letters, 59(11), 1347â1349.

Authors 3

Y. Morita (first)
K. Miki (additional)
H. Tokumoto (additional)

References 22 Referenced 61

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{'key': '2024020302552300200_r3'}
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:31 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 9:55 p.m.)
Indexed	1 year, 7 months ago (Feb. 4, 2024, 12:20 p.m.)
Issued	33 years, 11 months ago (Sept. 9, 1991)
Published	33 years, 11 months ago (Sept. 9, 1991)
Published Print	33 years, 11 months ago (Sept. 9, 1991)

Funders 0

None

BibTeX

@article{Morita_1991, title={Direct observation of SiH3 on a 1%-HF-treated Si(111) surface by scanning tunneling microscopy}, volume={59}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.105304}, DOI={10.1063/1.105304}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Morita, Y. and Miki, K. and Tokumoto, H.}, year={1991}, month=sep, pages={1347–1349} }

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