DOI: 10.1063/1.104938. How far does the charge state affect the iron behavior in silicon?

How far does the charge state affect the iron behavior in silicon?

10.1063/1.104938

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Low-temperature precipitation of neutral interstitial iron in n-type silicon is investigated by means of photocapacitance measurements. Isothermal kinetics as well as iron depth profiles are observed which agree very well with an outdiffusion mechanism of iron to the sample surface. From these data the diffusion coefficient of neutral iron in silicon could be determined. Comparison with published results on positively charged iron in p-type silicon reveals a higher stability of neutral iron as well as a charge state dependence of its diffusion mechanism.

Bibliography

Heiser, T., & Mesli, A. (1991). How far does the charge state affect the iron behavior in silicon? Applied Physics Letters, 58(20), 2240â2242.

Authors 2

T. Heiser (first)
A. Mesli (additional)

References 18 Referenced 20

10.1016/0378-4363(83)90263-2 / Physica B (1983)
10.1002/pssa.2210640123 / Phys. Status Solidi A (1981)
10.1103/PhysRevB.31.7979 / Phys. Rev. B (1985)
10.1103/PhysRevB.30.4564 / Phys. Rev. B (1984)
10.1063/1.104005 / Appl. Phys. Lett. (1990)
10.1063/1.89630 / Appl. Phys. Lett. (1977)
{'key': '2024020302250366200_r7', 'first-page': '350', 'volume': '15', 'year': '1981', 'journal-title': 'Sov. Phys. Semicond.'} / Sov. Phys. Semicond. (1981)
10.1143/JJAP.25.234 / Jpn. J. Appl. Phys. (1986)
10.1063/1.343433 / J. Appl. Phys. (1989)
10.1016/0921-5107(89)90290-0 / Mater. Sci. Eng. B (1989)
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10.1016/0022-3697(58)90053-2 / J. Phys. Chem. Solids (1958)
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10.1007/BF00617708 / Appl. Phys. A (1983)
{'key': '2024020302250366200_r16'}
{'key': '2024020302250366200_r17', 'first-page': '424', 'volume': '23', 'year': '1989', 'journal-title': 'Sov. Phys. Semicond.'} / Sov. Phys. Semicond. (1989)
{'key': '2024020302250366200_r17a', 'first-page': '429', 'volume': '23', 'year': '1989', 'journal-title': 'Sov. Phys. Semicond.'} / Sov. Phys. Semicond. (1989)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:31 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 9:25 p.m.)
Indexed	1 year, 6 months ago (Feb. 6, 2024, 6:44 p.m.)
Issued	34 years, 3 months ago (May 20, 1991)
Published	34 years, 3 months ago (May 20, 1991)
Published Print	34 years, 3 months ago (May 20, 1991)

Funders 0

None

BibTeX

@article{Heiser_1991, title={How far does the charge state affect the iron behavior in silicon?}, volume={58}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.104938}, DOI={10.1063/1.104938}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Heiser, T. and Mesli, A.}, year={1991}, month=may, pages={2240–2242} }

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