DOI: 10.1063/1.104901. Measurements of the three-dimensional impurity profile in Si using chemical etching and scanning tunneling microscopy

Measurements of the three-dimensional impurity profile in Si using chemical etching and scanning tunneling microscopy

10.1063/1.104901

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Three-dimensional boron impurity concentration profiles in silicon substrates have been measured with 10 nm resolution by scanning tunneling microscopy (STM) on chemically etched cleaved silicon surfaces using an impurity sensitive HF-HNO3-H2O solution. Comparisons to depth profiles obtained with secondary-ion mass spectroscopy and spreading resistance methods reveal that our proposed method measures activated boron impurity concentration rather than total boron concentration. Three-dimensional impurity profiling is demonstrated with a metal-oxide-silicon structure, and the lateral junction depth in the test structure is found to be 70% of the junction depth.

Bibliography

Takigami, T., & Tanimoto, M. (1991). Measurements of the three-dimensional impurity profile in Si using chemical etching and scanning tunneling microscopy. Applied Physics Letters, 58(20), 2288â2290.

Authors 2

Takako Takigami (first)
Masafumi Tanimoto (additional)

References 11 Referenced 35

10.1149/1.2096273 / J. EIectrochem. Soc. (1988)
{'key': '2024020302214959100_r2'}
{'key': '2024020302214959100_r3'}
10.1063/1.99876 / Appl. Phys. Lett. (1988)
10.1116/1.576385 / J. Vac. Sci. Technol. A (1990)
10.1063/1.102312 / Appl. Phys. Lett. (1989)
10.1116/1.585015 / J. Vac. Sci. Technol. A (1990)
10.1007/BF00884267 / Appl. Phys. (1974)
10.1149/1.2427397 / J. Electrochem. Soc. (1959)
10.2493/jjspe1933.51.1013 / Jpn. Soc. Precision Eng. (1985)
{'key': '2024020302214959100_r11', 'first-page': '64', 'volume': '24', 'year': '1981', 'journal-title': 'Solid State Technol.'} / Solid State Technol. (1981)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:31 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 9:21 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 10:22 p.m.)
Issued	34 years, 3 months ago (May 20, 1991)
Published	34 years, 3 months ago (May 20, 1991)
Published Print	34 years, 3 months ago (May 20, 1991)

Funders 0

None

BibTeX

@article{Takigami_1991, title={Measurements of the three-dimensional impurity profile in Si using chemical etching and scanning tunneling microscopy}, volume={58}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.104901}, DOI={10.1063/1.104901}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Takigami, Takako and Tanimoto, Masafumi}, year={1991}, month=may, pages={2288–2290} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        6
      ]
    ],
    "date-time": "2024-02-06T03:22:44Z",
    "timestamp": 1707189764504
  },
  "reference-count": 11,
  "publisher": "AIP Publishing",
  "issue": "20",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1991,
        5,
        20
      ]
    ]
  },
  "abstract": "<jats:p>Three-dimensional boron impurity concentration profiles in silicon substrates have been measured with 10 nm resolution by scanning tunneling microscopy (STM) on chemically etched cleaved silicon surfaces using an impurity sensitive HF-HNO3-H2O solution. Comparisons to depth profiles obtained with secondary-ion mass spectroscopy and spreading resistance methods reveal that our proposed method measures activated boron impurity concentration rather than total boron concentration. Three-dimensional impurity profiling is demonstrated with a metal-oxide-silicon structure, and the lateral junction depth in the test structure is found to be 70% of the junction depth.</jats:p>",
  "DOI": "10.1063/1.104901",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:31:59Z",
    "timestamp": 1027690319000
  },
  "page": "2288-2290",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 35,
  "title": "Measurements of the three-dimensional impurity profile in Si using chemical etching and scanning tunneling microscopy",
  "prefix": "10.1063",
  "volume": "58",
  "author": [
    {
      "given": "Takako",
      "family": "Takigami",
      "sequence": "first",
      "affiliation": [
        {
          "name": "NTT LSI Laboratories, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan"
        }
      ]
    },
    {
      "given": "Masafumi",
      "family": "Tanimoto",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "NTT LSI Laboratories, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020302214959100_r1",
      "doi-asserted-by": "crossref",
      "first-page": "2370",
      "DOI": "10.1149/1.2096273",
      "volume": "135",
      "year": "1988",
      "journal-title": "J. EIectrochem. Soc."
    },
    {
      "key": "2024020302214959100_r2"
    },
    {
      "key": "2024020302214959100_r3"
    },
    {
      "key": "2024020302214959100_r4",
      "doi-asserted-by": "crossref",
      "first-page": "487",
      "DOI": "10.1063/1.99876",
      "volume": "53",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020302214959100_r5",
      "doi-asserted-by": "crossref",
      "first-page": "549",
      "DOI": "10.1116/1.576385",
      "volume": "8",
      "year": "1990",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020302214959100_r6",
      "doi-asserted-by": "crossref",
      "first-page": "1662",
      "DOI": "10.1063/1.102312",
      "volume": "55",
      "year": "1989",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020302214959100_r7",
      "doi-asserted-by": "crossref",
      "first-page": "533",
      "DOI": "10.1116/1.585015",
      "volume": "8",
      "year": "1990",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020302214959100_r8",
      "doi-asserted-by": "crossref",
      "first-page": "125",
      "DOI": "10.1007/BF00884267",
      "volume": "4",
      "year": "1974",
      "journal-title": "Appl. Phys."
    },
    {
      "key": "2024020302214959100_r9",
      "doi-asserted-by": "crossref",
      "first-page": "505",
      "DOI": "10.1149/1.2427397",
      "volume": "106",
      "year": "1959",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020302214959100_r10",
      "doi-asserted-by": "crossref",
      "first-page": "1013",
      "DOI": "10.2493/jjspe1933.51.1013",
      "volume": "51",
      "year": "1985",
      "journal-title": "Jpn. Soc. Precision Eng."
    },
    {
      "key": "2024020302214959100_r11",
      "first-page": "64",
      "volume": "24",
      "year": "1981",
      "journal-title": "Solid State Technol."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/58/20/2288/18482206/2288_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/58/20/2288/18482206/2288_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T02:21:56Z",
    "timestamp": 1706926916000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/58/20/2288/58596/Measurements-of-the-three-dimensional-impurity"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1991,
        5,
        20
      ]
    ]
  },
  "references-count": 11,
  "journal-issue": {
    "issue": "20",
    "published-print": {
      "date-parts": [
        [
          1991,
          5,
          20
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.104901",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1991,
        5,
        20
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1991,
        5,
        20
      ]
    ]
  }
}