Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Using deep level transient spectroscopy, we have determined the band offset of a GaAs/GaInAs/GaAs single quantum well. To interpret the data, we propose an original model which takes into account the fact that the emission rate of electrons depends on the charge density in the well, and thus varies continuously during the emission process, contrary to previous models. The validity of the analysis is tested with success by using capacitance-voltage measurement to determine the band offset.

Bibliography

Letartre, X., Stievenard, D., & Barbier, E. (1991). Accurate determination of the conduction-band offset of a single quantum well using deep level transient spectroscopy. Applied Physics Letters, 58(10), 1047–1049.

Authors 3
  1. X. Letartre (first)
  2. D. Stievenard (additional)
  3. E. Barbier (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:31 a.m.)
Deposited 1 year, 6 months ago (Feb. 2, 2024, 9:07 p.m.)
Indexed 1 year ago (Aug. 8, 2024, 1:19 p.m.)
Issued 34 years, 5 months ago (March 11, 1991)
Published 34 years, 5 months ago (March 11, 1991)
Published Print 34 years, 5 months ago (March 11, 1991)
Funders 0

None

@article{Letartre_1991, title={Accurate determination of the conduction-band offset of a single quantum well using deep level transient spectroscopy}, volume={58}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.104419}, DOI={10.1063/1.104419}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Letartre, X. and Stievenard, D. and Barbier, E.}, year={1991}, month=mar, pages={1047–1049} }