Abstract
Using deep level transient spectroscopy, we have determined the band offset of a GaAs/GaInAs/GaAs single quantum well. To interpret the data, we propose an original model which takes into account the fact that the emission rate of electrons depends on the charge density in the well, and thus varies continuously during the emission process, contrary to previous models. The validity of the analysis is tested with success by using capacitance-voltage measurement to determine the band offset.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:31 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 2, 2024, 9:07 p.m.) |
Indexed | 1 year ago (Aug. 8, 2024, 1:19 p.m.) |
Issued | 34 years, 5 months ago (March 11, 1991) |
Published | 34 years, 5 months ago (March 11, 1991) |
Published Print | 34 years, 5 months ago (March 11, 1991) |
@article{Letartre_1991, title={Accurate determination of the conduction-band offset of a single quantum well using deep level transient spectroscopy}, volume={58}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.104419}, DOI={10.1063/1.104419}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Letartre, X. and Stievenard, D. and Barbier, E.}, year={1991}, month=mar, pages={1047–1049} }