DOI: 10.1063/1.104218. Sputter deposition of YBa2Cu3O7−<i>x</i> films on Si at 500 °C with conducting metallic oxide as a buffer layer

Sputter deposition of YBa2Cu3O7−x films on Si at 500 °C with conducting metallic oxide as a buffer layer

10.1063/1.104218

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Superconducting YBa2Cu3O7−x thin films were deposited on Si substrates at 500 °C by rf magnetron sputtering from a stoichiometric oxide target. Metallic oxide RuO2, sputtered by reactive dc magnetron, was used as a buffer layer to nucleate the superconducting film and minimize the reactions between Si and superconductor. The as-deposited thin films, without further post high-temperature annealing, were completely superconductive at 79 K. Very smooth surface morphology was demonstrated by scanning electron microscopy. X-ray diffraction data indicated that the films had a randomly oriented polycrystalline structure. Auger electron spectroscopy did not reveal interdiffusion of elements in the three layers.

Bibliography

Jia, Q. X., & Anderson, W. A. (1990). Sputter deposition of YBa2Cu3O7âx films on Si at 500âÂ°C with conducting metallic oxide as a buffer layer. Applied Physics Letters, 57(3), 304â306.

Authors 2

Q. X. Jia (first)
W. A. Anderson (additional)

References 19 Referenced 62

10.1063/1.99373 / Appl. Phys. Lett. (1988)
10.1063/1.99670 / Appl. Phys. Lett. (1988)
10.1063/1.99743 / Appl. Phys. Lett. (1988)
10.1063/1.100578 / Appl. Phys. Lett. (1988)
10.1063/1.100588 / Appl. Phys. Lett. (1988)
10.1063/1.99749 / Appl. Phys. Lett. (1988)
10.1063/1.100533 / Appl. Phys. Lett. (1988)
10.1063/1.101557 / Appl. Phys. Lett. (1989)
10.1063/1.101462 / Appl. Phys. Lett. Phys. (1989)
10.1063/1.100488 / Appl. Phys. Lett. (1988)
10.1063/1.100515 / Appl. Phys. Lett. (1988)
10.1063/1.99771 / Appl. Phys. Lett. (1988)
10.1063/1.100647 / Appl. Phys. Lett. (1988)
{'key': '2024020301140111200_r14', 'first-page': '2077', 'volume': '132', 'year': '1985', 'journal-title': 'J. Electrochem. Soc.'} / J. Electrochem. Soc. (1985)
10.1063/1.98012 / Appl. Phys. Lett. (1987)
10.1063/1.97673 / Appl. Phys. Lett. (1987)
10.1142/S0217979289000555 / Int. J. Modern Phys. B (1989)
10.1143/JJAP.27.L639 / Jpn. J. Appl. Phys. (1988)
10.1063/1.101725 / Appl. Phys. Lett. (1989)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:05 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 8:14 p.m.)
Indexed	1 year, 6 months ago (Feb. 4, 2024, 10:26 a.m.)
Issued	35 years, 1 month ago (July 16, 1990)
Published	35 years, 1 month ago (July 16, 1990)
Published Print	35 years, 1 month ago (July 16, 1990)

Funders 0

None

BibTeX

@article{Jia_1990, title={Sputter deposition of YBa2Cu3O7−x films on Si at 500 °C with conducting metallic oxide as a buffer layer}, volume={57}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.104218}, DOI={10.1063/1.104218}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Jia, Q. X. and Anderson, W. A.}, year={1990}, month=jul, pages={304–306} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        4
      ]
    ],
    "date-time": "2024-02-04T15:26:22Z",
    "timestamp": 1707060382690
  },
  "reference-count": 19,
  "publisher": "AIP Publishing",
  "issue": "3",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1990,
        7,
        16
      ]
    ]
  },
  "abstract": "<jats:p>Superconducting YBa2Cu3O7\u2212x thin films were deposited on Si substrates at 500\u2009\u00b0C by rf magnetron sputtering from a stoichiometric oxide target. Metallic oxide RuO2, sputtered by reactive dc magnetron, was used as a buffer layer to nucleate the superconducting film and minimize the reactions between Si and superconductor. The as-deposited thin films, without further post high-temperature annealing, were completely superconductive at 79 K. Very smooth surface morphology was demonstrated by scanning electron microscopy. X-ray diffraction data indicated that the films had a randomly oriented polycrystalline structure. Auger electron spectroscopy did not reveal interdiffusion of elements in the three layers.</jats:p>",
  "DOI": "10.1063/1.104218",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:05:20Z",
    "timestamp": 1027688720000
  },
  "page": "304-306",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 62,
  "title": "Sputter deposition of YBa2Cu3O7\u2212<i>x</i> films on Si at 500\u2009\u00b0C with conducting metallic oxide as a buffer layer",
  "prefix": "10.1063",
  "volume": "57",
  "author": [
    {
      "given": "Q. X.",
      "family": "Jia",
      "sequence": "first",
      "affiliation": [
        {
          "name": "State University of New York at Buffalo, Department of Electrical and Computer Engineering, Institute on Superconductivity, Room 217, Bonner Hall, Buffalo, New York 14260"
        }
      ]
    },
    {
      "given": "W. A.",
      "family": "Anderson",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "State University of New York at Buffalo, Department of Electrical and Computer Engineering, Institute on Superconductivity, Room 217, Bonner Hall, Buffalo, New York 14260"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020301140111200_r1",
      "doi-asserted-by": "crossref",
      "first-page": "584",
      "DOI": "10.1063/1.99373",
      "volume": "52",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020301140111200_r2",
      "doi-asserted-by": "crossref",
      "first-page": "1185",
      "DOI": "10.1063/1.99670",
      "volume": "52",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020301140111200_r3",
      "doi-asserted-by": "crossref",
      "first-page": "1987",
      "DOI": "10.1063/1.99743",
      "volume": "52",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020301140111200_r4",
      "doi-asserted-by": "crossref",
      "first-page": "153",
      "DOI": "10.1063/1.100578",
      "volume": "53",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020301140111200_r5",
      "doi-asserted-by": "crossref",
      "first-page": "243",
      "DOI": "10.1063/1.100588",
      "volume": "53",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020301140111200_r6",
      "doi-asserted-by": "crossref",
      "first-page": "2068",
      "DOI": "10.1063/1.99749",
      "volume": "52",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020301140111200_r7",
      "doi-asserted-by": "crossref",
      "first-page": "2566",
      "DOI": "10.1063/1.100533",
      "volume": "53",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020301140111200_r8",
      "doi-asserted-by": "crossref",
      "first-page": "859",
      "DOI": "10.1063/1.101557",
      "volume": "54",
      "year": "1989",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020301140111200_r9",
      "doi-asserted-by": "crossref",
      "first-page": "578",
      "DOI": "10.1063/1.101462",
      "volume": "54",
      "year": "1989",
      "journal-title": "Appl. Phys. Lett. Phys."
    },
    {
      "key": "2024020301140111200_r10",
      "doi-asserted-by": "crossref",
      "first-page": "1967",
      "DOI": "10.1063/1.100488",
      "volume": "53",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020301140111200_r11",
      "doi-asserted-by": "crossref",
      "first-page": "2330",
      "DOI": "10.1063/1.100515",
      "volume": "53",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020301140111200_r12",
      "doi-asserted-by": "crossref",
      "first-page": "2263",
      "DOI": "10.1063/1.99771",
      "volume": "52",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020301140111200_r13",
      "doi-asserted-by": "crossref",
      "first-page": "925",
      "DOI": "10.1063/1.100647",
      "volume": "53",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020301140111200_r14",
      "first-page": "2077",
      "volume": "132",
      "year": "1985",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020301140111200_r15",
      "doi-asserted-by": "crossref",
      "first-page": "854",
      "DOI": "10.1063/1.98012",
      "volume": "50",
      "year": "1987",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020301140111200_r16",
      "doi-asserted-by": "crossref",
      "first-page": "1879",
      "DOI": "10.1063/1.97673",
      "volume": "50",
      "year": "1987",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020301140111200_r17",
      "doi-asserted-by": "crossref",
      "first-page": "743",
      "DOI": "10.1142/S0217979289000555",
      "volume": "3",
      "year": "1989",
      "journal-title": "Int. J. Modern Phys. B"
    },
    {
      "key": "2024020301140111200_r18",
      "doi-asserted-by": "crossref",
      "first-page": "L639",
      "DOI": "10.1143/JJAP.27.L639",
      "volume": "27",
      "year": "1988",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020301140111200_r19",
      "doi-asserted-by": "crossref",
      "first-page": "1041",
      "DOI": "10.1063/1.101725",
      "volume": "55",
      "year": "1989",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/57/3/304/18477500/304_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/57/3/304/18477500/304_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T01:14:15Z",
    "timestamp": 1706922855000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/57/3/304/57930/Sputter-deposition-of-YBa2Cu3O7-x-films-on-Si-at"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1990,
        7,
        16
      ]
    ]
  },
  "references-count": 19,
  "journal-issue": {
    "issue": "3",
    "published-print": {
      "date-parts": [
        [
          1990,
          7,
          16
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.104218",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1990,
        7,
        16
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1990,
        7,
        16
      ]
    ]
  }
}