DOI: 10.1063/1.103919. <i>p</i>-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth

p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth

10.1063/1.103919

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A novel approach to producing p-type ZnSe epitaxial layers is reported which involves nitrogen atom beam doping during molecular beam epitaxial growth. Net acceptor concentrations as large as 3.4×1017 cm−3 have been measured in nitrogen atom beam doped ZnSe/GaAs heteroepitaxial layers which represents the highest acceptor concentration reported to date for ZnSe:N epitaxial material grown by molecular beam epitaxy. In addition, light-emitting diodes based on ZnSe:N/ZnSe:Cl, p-n homojunctions have been found to exhibit dominant electroluminescence in the blue region of the visible spectrum at room temperature.

Authors 5

R. M. Park (first)
M. B. Troffer (additional)
C. M. Rouleau (additional)
J. M. DePuydt (additional)
M. A. Haase (additional)

References 13 Referenced 562

10.1063/1.345223 / J. Appl. Phys. (1990)
10.1143/JJAP.28.L531 / Jpn. J. Appl. Phys. (1989)
10.1143/JJAP.27.L2195 / Jpn. J. Appl. Phys. (1988)
10.1063/1.336212 / J. Appl. Phys. (1985)
10.1063/1.97374 / Appl. Phys. Lett. (1986)
10.1016/0022-0248(90)90738-7 / J. Crys. Growth (1988)
10.1063/1.102996 / Appl. Phys. Lett. (1990)
10.1557/JMR.1990.0475 / J. Mater. Res. (1990)
10.1103/PhysRevB.39.13016 / Phys. Rev. B (1989)
10.1103/PhysRevB.27.2419 / Phys. Rev. B (1983)
10.1063/1.339323 / J. Appl. Phys. (1987)
10.1063/1.102641 / Appl. Phys. Lett. (1990)
10.1143/JJAP.28.L528 / Jpn. J. Appl. Phys. (1989)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:05 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 8:39 p.m.)
Indexed	1 month, 1 week ago (July 12, 2025, 6:48 p.m.)
Issued	34 years, 9 months ago (Nov. 12, 1990)
Published	34 years, 9 months ago (Nov. 12, 1990)
Published Print	34 years, 9 months ago (Nov. 12, 1990)

Funders 0

None

BibTeX

@article{Park_1990, title={p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth}, volume={57}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.103919}, DOI={10.1063/1.103919}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Park, R. M. and Troffer, M. B. and Rouleau, C. M. and DePuydt, J. M. and Haase, M. A.}, year={1990}, month=nov, pages={2127–2129} }

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