DOI: 10.1063/1.103897. Excimer-laser-induced crystallization of hydrogenated amorphous silicon

Excimer-laser-induced crystallization of hydrogenated amorphous silicon

10.1063/1.103897

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The electronic transport properties and structural morphology of fast-pulse excimer-laser- crystallized hydrogenated amorphous silicon (a-Si:H) thin films have been measured. The room-temperature dark dc conductivities and Hall mobilities increase by several orders of magnitude at well-defined laser energy density thresholds which decrease as the impurity concentration in the films increases. The structural morphology of the films suggests an impurity-induced reduction of the a-Si:H melt temperature as the origin of this behavior.

Bibliography

Winer, K., Anderson, G. B., Ready, S. E., Bachrach, R. Z., Johnson, R. I., Ponce, F. A., & Boyce, J. B. (1990). Excimer-laser-induced crystallization of hydrogenated amorphous silicon. Applied Physics Letters, 57(21), 2222â2224.

Authors 7

K. Winer (first)
G. B. Anderson (additional)
S. E. Ready (additional)
R. Z. Bachrach (additional)
R. I. Johnson (additional)
F. A. Ponce (additional)
J. B. Boyce (additional)

References 11 Referenced 50

10.1557/PROC-71-435 / Mater. Res. Soc. Symp. Proc. (1986)
{'key': '2024020301411560700_r2'}
10.1103/PhysRevLett.52.2360 / Phys. Rev. Lett. (1984)
10.1103/PhysRevB.34.2606 / Phys. Rev. B (1986)
10.1080/14786437708232943 / Philos. Mag. (1977)
10.1063/1.334738 / J. Appl. Phys. (1985)
10.1557/PROC-35-25 / Mater. Res. Soc. Symp. Proc. (1984)
10.1103/PhysRevB.40.12558 / Phys. Rev. B (1989)
{'key': '2024020301411560700_r9'}
10.1007/BF02733813 / J. Electron. Mater. (1990)
{'key': '2024020301411560700_r11', 'first-page': '183', 'volume': '164', 'year': '1990', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (1990)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:51 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 8:41 p.m.)
Indexed	1 year, 7 months ago (Feb. 3, 2024, 12:01 p.m.)
Issued	34 years, 9 months ago (Nov. 19, 1990)
Published	34 years, 9 months ago (Nov. 19, 1990)
Published Print	34 years, 9 months ago (Nov. 19, 1990)

Funders 0

None

BibTeX

@article{Winer_1990, title={Excimer-laser-induced crystallization of hydrogenated amorphous silicon}, volume={57}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.103897}, DOI={10.1063/1.103897}, number={21}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Winer, K. and Anderson, G. B. and Ready, S. E. and Bachrach, R. Z. and Johnson, R. I. and Ponce, F. A. and Boyce, J. B.}, year={1990}, month=nov, pages={2222–2224} }

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