Abstract
We report the growth of epitaxial τ-MnAl ferromagnetic films on GaAs substrates by molecular beam epitaxy (MBE). Reflection high-energy electron diffraction and x-ray diffraction show that the τ-phase films grow with the c axis of the tetragonal unit cell normal to the {100}GaAs substrate surface. In the bulk, τ-MnAl is a metastable ferromagnetic phase with uniaxial magnetocrystalline anisotropy. The large hysteresis observed in the Hall resistance versus applied magnetic field suggests that the easy magnetization direction is indeed parallel to the c axis in the MBE-grown films. The growth of these ferromagnetic films with perpendicular magnetization on compound semiconductor substrates creates the possibility of novel devices that combine magnetic memory and magneto-optic functions with semiconductor electronics and photonics.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:05 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 2, 2024, 8:46 p.m.) |
Indexed | 1 year, 1 month ago (July 5, 2024, 3:20 p.m.) |
Issued | 34 years, 8 months ago (Dec. 10, 1990) |
Published | 34 years, 8 months ago (Dec. 10, 1990) |
Published Print | 34 years, 8 months ago (Dec. 10, 1990) |
@article{Sands_1990, title={Epitaxial ferromagnetic τ-MnAl films on GaAs}, volume={57}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.103826}, DOI={10.1063/1.103826}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Sands, T. and Harbison, J. P. and Leadbeater, M. L. and Allen, S. J. and Hull, G. W. and Ramesh, R. and Keramidas, V. G.}, year={1990}, month=dec, pages={2609–2611} }