DOI: 10.1063/1.103685. Er/Si (111) interface intermixing investigation using core level photoemission

Er/Si (111) interface intermixing investigation using core level photoemission

10.1063/1.103685

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We present in this letter Si 2p core level photoemission measurements on the Er/Si (111) interface formed at room temperature. These spectroscopic data are compared with those measured on amorphous silicide films for various Er concentrations grown by coevaporation of Er and Si species at room temperature under ultrahigh vacuum conditions. This study reveals a strong interaction between Er and the Si (111) substrate even at very low coverage. A mixed interface is observed with silicide formation up to 6 monolayers of deposited metal which corresponds to the onset of erbium metal overgrowth. The Er concentration in the interfacial silicide is found to increase as a function of the deposited Er thickness. A model for the interface is proposed and discussed.

Bibliography

Haderbache, L., Wetzel, P., Pirri, C., Peruchetti, J. C., Bolmont, D., & Gewinner, G. (1990). Er/Siâ(111) interface intermixing investigation using core level photoemission. Applied Physics Letters, 57(4), 341â343.

Authors 6

L. Haderbache (first)
P. Wetzel (additional)
C. Pirri (additional)
J. C. Peruchetti (additional)
D. Bolmont (additional)
G. Gewinner (additional)

References 15 Referenced 7

10.1063/1.92457 / Appl. Phys. Lett. (1981)
10.1063/1.101517 / Appl. Phys. Lett. (1989)
10.1016/0169-4332(89)90533-3 / Appl. Surf. Sci. (1989)
10.1016/0169-4332(89)90532-1 / Appl. Surf. Sci. (1989)
10.1103/PhysRevB.40.10607 / Phys. Rev. B (1989)
10.1116/1.582593 / J. Vac. Sci. Technol. B (1983)
10.1116/1.571999 / J. Vac. Sci. Technol. A (1983)
10.1016/0038-1098(83)91061-X / Solid-State Commun. (1983)
10.1103/PhysRevB.30.7370 / Phys. Rev. B (1984)
10.1103/PhysRevLett.53.2331 / Phys. Rev. Lett. (1984)
10.1063/1.101908 / Appl. Phys. Lett. (1989)
10.1116/1.573364 / J. Vac. Sci. Technol. A (1985)
10.1116/1.575804 / J. Vac. Sci. Technol. A (1989)
10.1016/0039-6028(81)90308-3 / Surf. Sci. (1981)
10.1103/PhysRevB.33.726 / Phys. Rev. B (1986)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:51 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 8:15 p.m.)
Indexed	1 year, 7 months ago (Feb. 2, 2024, 8:43 p.m.)
Issued	35 years, 1 month ago (July 23, 1990)
Published	35 years, 1 month ago (July 23, 1990)
Published Print	35 years, 1 month ago (July 23, 1990)

Funders 0

None

BibTeX

@article{Haderbache_1990, title={Er/Si (111) interface intermixing investigation using core level photoemission}, volume={57}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.103685}, DOI={10.1063/1.103685}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Haderbache, L. and Wetzel, P. and Pirri, C. and Peruchetti, J. C. and Bolmont, D. and Gewinner, G.}, year={1990}, month=jul, pages={341–343} }

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