DOI: 10.1063/1.103550. Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O

Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O

10.1063/1.103550

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

This letter presents a unique process to grow high quality ultrathin (∼60 Å) gate dielectrics using N2O (nitrous oxide) gas. Compared with conventional rapid thermally grown oxide in the O2, the new oxynitride dielectrics show very large charge-to-breakdown (at +50 mA/cm2, 850 C/cm2 for oxynitride compared to 95 C/cm2 for the control thermal oxide) and less charge trapping under constant current stress. Significantly reduced interface state generation was also observed under constant current stress and x-ray radiation. A secondary-ion mass spectroscopy depth profile indicates a nitrogen-rich layer at the Si/SiO2 interface, which can explain the improved integrity of oxynitride dielectric.

Bibliography

Hwang, H., Ting, W., Maiti, B., Kwong, D.-L., & Lee, J. (1990). Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O. Applied Physics Letters, 57(10), 1010â1011.

Authors 5

Hyunsang Hwang (first)
Wenchi Ting (additional)
Bikas Maiti (additional)
Dim-Lee Kwong (additional)
Jack Lee (additional)

References 11 Referenced 183

{'key': '2024020301250677100_r1', 'first-page': '498', 'volume': 'ED-29', 'year': '1982', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1982)
{'key': '2024020301250677100_r2', 'first-page': '106', 'volume': 'ED-32', 'year': '1985', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1985)
{'key': '2024020301250677100_r3', 'first-page': '340', 'volume': 'ED-36', 'year': '1989', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1989)
{'key': '2024020301250677100_r4', 'first-page': '58', 'volume': 'EDL-8', 'year': '1987', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1987)
10.1116/1.569946 / J. Vac. Sci. Technol. (1979)
10.1063/1.95098 / Appl. Phys. Lett. (1984)
{'key': '2024020301250677100_r7', 'first-page': '423', 'volume': 'ED-32', 'year': '1985', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1985)
10.1063/1.95956 / Appl. Phys. Lett. (1985)
{'key': '2024020301250677100_r9', 'first-page': '396', 'volume': '1981', 'year': '1981', 'journal-title': 'IEDM Tech. Dig.'} / IEDM Tech. Dig. (1981)
10.1063/1.323161 / J. Appl. Phys. (1976)
10.1016/0038-1101(78)90215-0 / Solid-State Electron. (1978)

Dates

Type	When
Created	23 years ago (July 26, 2002, 8:51 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 8:25 p.m.)
Indexed	4 months ago (April 20, 2025, 12:29 a.m.)
Issued	34 years, 11 months ago (Sept. 3, 1990)
Published	34 years, 11 months ago (Sept. 3, 1990)
Published Print	34 years, 11 months ago (Sept. 3, 1990)

Funders 0

None

BibTeX

@article{Hwang_1990, title={Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O}, volume={57}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.103550}, DOI={10.1063/1.103550}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hwang, Hyunsang and Ting, Wenchi and Maiti, Bikas and Kwong, Dim-Lee and Lee, Jack}, year={1990}, month=sep, pages={1010–1011} }

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